| 参数 | 值 |
|---|---|
| 产品 | 通用MOSFET |
| 型号编码 | IPD65R650CE |
| 说明 | 通用MOSFET DPAK(TO-252) |
| 品牌 | Infineon(英飞凌) |
| 起订量 | 1 |
| 最小包 | 2500 |
| 现货 | 2788 [库存更新时间:2026-04-13] |
| Moisture Level | 3 |
| Rds On(Max)@Id,Vgs | 650mΩ |
| 漏源极电压Vds | 650V |
| 连续漏极电流Id | 7A |
| 封装/外壳 | DPAK (TO-252) |
| Rth | 2.0K/W |
| QG | 23.0nC |
| Budgetary Price €/1k | 0.45 |
| 工作温度 | -40.0°C |
| Ptot max | 63.0W |
| FET类型 | N-Channel |
| Pin Count | 3.0Pins |
| RthJA max | 62.0K/W |
| Mounting | SMT |
| 栅极电压Vgs | 2.5V,3.5V |


