| 参数 | 值 |
|---|---|
| 产品 | 通用MOSFET |
| 型号编码 | IRFHM830 |
| 说明 | 通用MOSFET PQFN3.3x3.3B/G |
| 品牌 | Infineon(英飞凌) |
| 起订量 | 4000 |
| 最小包 | 4000 |
| 现货 | 8288 [库存更新时间:2025-11-16] |
| Moisture Level | 1 Ohms |
| 漏源极电压Vds | 30V |
| 封装/外壳 | PQFN 3.3 x 3.3 B/G |
| Tj max | 150.0°C |
| QG | 15.0nC |
| Budgetary Price €/1k | 0.28 |
| Rds On(Max)@Id,Vgs | 6mΩ |
| Ptot max | 37.0W |
| FET类型 | N-Channel |
| Qgd | 5.0nC |
| 栅极电压Vgs | 20V |
| Ptot (@ TA=25°C) max | 2.7W |
| Mounting | SMD |
| RthJC max | 3.4K/W |
| 连续漏极电流Id | 17A |


