| 参数 | 值 |
|---|---|
| 产品 | 通用MOSFET |
| 型号编码 | IPP65R660CFDA |
| 说明 | 通用MOSFET TO-220 |
| 品牌 | Infineon(英飞凌) |
| 起订量 | 500 |
| 最小包 | 500 |
| 现货 | 1288 [库存更新时间:1970-01-01] |
| Rds On(Max)@Id,Vgs | 660mΩ |
| 漏源极电压Vds | 650V |
| 连续漏极电流Id | 6A |
| Technology | CoolMOS™ CFDA |
| RthJC max | 2.0 K/W |
| QG (typ @10V) | 20.0 nC |
| 封装/外壳 | TO-220 |
| Budgetary Price €/1k | 0.75 |
| Ptot max | 62.5W |
| FET类型 | N-Channel |
| RthJA max | 62.0K/W |
| 栅极电压Vgs | 3.5V,4.5V |
| Special Features | automotive |
| Simulator | OrCAD |
| Language | PSpice |
| Encryption | no |
| Product Category | Power MOSFET HV CoolMOS™ |


