| 参数 | 值 |
|---|---|
| 产品 | 通用MOSFET |
| 型号编码 | IPDD60R080G7 |
| 说明 | 通用MOSFET DDPAK(PG-HDSOP-10) |
| 品牌 | Infineon(英飞凌) |
| 起订量 | 1700 |
| 最小包 | 1700 |
| 现货 | 3687 [库存更新时间:2026-08-14] |
| Moisture Level | 1 Ohms |
| 连续漏极电流Id | 29A |
| RthJC max | 0.72 K/W |
| QG (typ @10V) | 42.0 nC |
| 封装/外壳 | DDPAK (PG-HDSOP-10) |
| 工作温度 | -55°C~150°C |
| Budgetary Price €/1k | 2.67 |
| Ptot max | 174.0 W |
| FET类型 | N-Channel |
| Qgd | 15.0 nC |
| IDpuls max | 83.0 A |
| 漏源极电压Vds | 600V |
| Rds On(Max)@Id,Vgs | 80mΩ |
| Pin Count | 10.0 Pins |
| 栅极电压Vgs | 3V,4V |
| Mounting | SMT |
| RthJA max | 62.0 K/W |
| Special Features | highest performance |


