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    产品 型号 品牌 参数
    通用晶闸管 T2351N52TOH Infineon(英飞凌) 不重复通态电流:55000A 额定重复关闭状态电压 VDRM:5200V 关闭状态漏泄电流（在 VDRM IDRM 下）:200mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:3.2A 工作温度:-40°C ~ 125°C
    通用晶闸管 T3710N04TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:400.0 VDRM/ VRRM (V):400.0 V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):3710/85 rT [mΩ] (@Tvj max) max:0.048 Tvj [°C] max:140.0 ITSM:60000.0A VT0 [V] (@Tvj max) max:0.75 ∫I2dt [A²s · 103] (@10ms, Tvj max):18000.0 RthJC [K/kW] (@180° el sin) max:12.5 Clamping force [kn] min max:30.0 65.0 ITAVM:3710 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.50/15.0 ITSM [A] (@10ms, Tvj max):60000.0 tq [µs]:200.0
    通用晶闸管 T830N14TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0V Housing:Disc dia 58mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):844/85 rT [mΩ] (@Tvj max) max:0.3 Tvj [°C] max:125.0 ITSM:12500.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):781.0 RthJC [K/kW] (@180° el sin) max:30.0 Clamping force [kn] min max:9.0 18.0 ITAVM:826 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.94/3.0 ITSM [A] (@10ms, Tvj max):12500.0 tq [µs]:250.0
    通用晶闸管 T560N16TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):559/85 rT [mΩ] (@Tvj max) max:0.6 Tvj [°C] max:125.0 ITSM:6900.0 A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 RthJC [K/kW] (@180° el sin) max:44.0 RthJC [K/kW] (@180° el sin) max:44.0 rT [mΩ] (@Tvj max) max:0.6 Clamping force [kn] min max:5.0 10.0 ITAVM:595 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):559/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 ITSM [A] (@10ms, Tvj max):6900.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 Clamping force [kn] min max:5.0 10.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):6900.0
    通用晶闸管 T3710N02TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:200.0 VDRM/ VRRM (V):200.0V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):3710/85 rT [mΩ] (@Tvj max) max:0.048 Tvj [°C] max:140.0 ITSM:60000.0A VT0 [V] (@Tvj max) max:0.75 ∫I2dt [A²s · 103] (@10ms, Tvj max):18000.0 RthJC [K/kW] (@180° el sin) max:12.5 Clamping force [kn] min max:30.0 65.0 ITAVM:3710 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.50/15.0 ITSM [A] (@10ms, Tvj max):60000.0
    通用晶闸管 T1330N18TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1800.0 VDRM/ VRRM (V):1800.0V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1329/85 rT [mΩ] (@Tvj max) max:0.234 Tvj [°C] max:125.0 ITSM:23000.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):2645.0 RthJC [K/kW] (@180° el sin) max:18.4 RthJC [K/kW] (@180° el sin) max:18.4 rT [mΩ] (@Tvj max) max:0.234 Clamping force [kn] min max:20.0 45.0 ITAVM:1329 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1329/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.13/1.0 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):2645.0 ITSM [A] (@10ms, Tvj max):23000.0 VT/IT [V/kA] (@Tvj max):1.13/1.0 Clamping force [kn] min max:20.0 45.0 tq [µs]:300.0 ITSM [A] (@10ms, Tvj max):23000.0
    通用晶闸管 T160N18BOF Infineon(英飞凌) 不重复通态电流:3800A 额定重复关闭状态电压 VDRM:1800V 关闭状态漏泄电流（在 VDRM IDRM 下）:30mA 保持电流Ih最大值:200mA 栅极触发电压-Vgt:1.4V 栅极触发电流-Igt:150mA 包装方式:Tray 电流额定值:190A 工作温度:-40°C ~ 125°C
    通用晶闸管 T1930N34TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:3400.0 VDRM/ VRRM (V):3400.0V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2180/85 rT [mΩ] (@Tvj max) max:0.2 Tvj [°C] max:125.0 ITSM:37000.0 A VT0 [V] (@Tvj max) max:1.08 ∫I2dt [A²s · 103] (@10ms, Tvj max):6850.0 RthJC [K/kW] (@180° el sin) max:8.5 Clamping force [kn] min max:40.0 65.0 ITAVM:2180 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.90/8.0 ITSM [A] (@10ms, Tvj max):37000.0 tq [µs]:450.0
    通用晶闸管 T1080N02TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:200.0 VDRM/ VRRM (V):200.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1075/85 rT [mΩ] (@Tvj max) max:0.2 Tvj [°C] max:140.0 ITSM:14500.0A VT0 [V] (@Tvj max) max:1.02 ∫I2dt [A²s · 103] (@10ms, Tvj max):1050.0 RthJC [K/kW] (@180° el sin) max:33.0 RthJC [K/kW] (@180° el sin) max:33.0 rT [mΩ] (@Tvj max) max:0.2 Clamping force [kn] min max:8.0 16.0 ITAVM:1075 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1075/85 Tvj [°C] max:140.0 VT/IT [V/kA] (@Tvj max):1.81/3.5 VT0 [V] (@Tvj max) max:1.02 ∫I2dt [A²s · 103] (@10ms, Tvj max):1050.0 ITSM [A] (@10ms, Tvj max):14500.0 VT/IT [V/kA] (@Tvj max):1.81/3.5 Clamping force [kn] min max:8.0 16.0 tq [µs]:150.0 ITSM [A] (@10ms, Tvj max):14500.0
    通用晶闸管 T830N18TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1800.0 VDRM/ VRRM (V):1800.0V Housing:Disc dia 58mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):844/85 rT [mΩ] (@Tvj max) max:0.3 Tvj [°C] max:125.0 ITSM:12500.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):781.0 RthJC [K/kW] (@180° el sin) max:30.0 Clamping force [kn] min max:9.0 18.0 ITAVM:826 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.94/3.0 ITSM [A] (@10ms, Tvj max):12500.0 tq [µs]:250.0
    通用晶闸管 T1930N32TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:3200.0 VDRM/ VRRM (V):3200.0 V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2180/85 rT [mΩ] (@Tvj max) max:0.2 Tvj [°C] max:125.0 ITSM:37000.0 A VT0 [V] (@Tvj max) max:1.08 ∫I2dt [A²s · 103] (@10ms, Tvj max):6850.0 RthJC [K/kW] (@180° el sin) max:8.5 Clamping force [kn] min max:40.0 65.0 ITAVM:2180 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.90/8.0 ITSM [A] (@10ms, Tvj max):37000.0 tq [µs]:450.0
    通用晶闸管 T300N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0 V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):303/85 rT [mΩ] (@Tvj max) max:1.35 Tvj [°C] max:125.0 ITSM:3400.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):58.0 RthJC [K/kW] (@180° el sin) max:69.0 RthJC [K/kW] (@180° el sin) max:69.0 rT [mΩ] (@Tvj max) max:1.35 Clamping force [kn] min max:2.5 5.0 ITAVM:303 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):303/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.20/0.8 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):58.0 ITSM [A] (@10ms, Tvj max):3400.0 VT/IT [V/kA] (@Tvj max):2.20/0.8 Clamping force [kn] min max:2.5 5.0 tq [µs]:200.0 ITSM [A] (@10ms, Tvj max):3400.0
    通用晶闸管 T731N44TOH Infineon(英飞凌) 不重复通态电流:17000A 额定重复关闭状态电压 VDRM:4400V 关闭状态漏泄电流（在 VDRM IDRM 下）:150mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:1.26A 工作温度:-40°C ~ 125°C
    通用晶闸管 T430N14TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):433/85 rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 ITSM:4600.0 A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 RthJC [K/kW] (@180° el sin) max:51.0 RthJC [K/kW] (@180° el sin) max:51.0 rT [mΩ] (@Tvj max) max:0.9 Clamping force [kn] min max:4.0 8.0 ITAVM:433 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):433/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 ITSM [A] (@10ms, Tvj max):4600.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 Clamping force [kn] min max:4.0 8.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):4600.0
    通用晶闸管 T420N16TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):424/85 rT [mΩ] (@Tvj max) max:0.75 Tvj [°C] max:125.0 ITSM:6400.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):205.0 RthJC [K/kW] (@180° el sin) max:56.0 RthJC [K/kW] (@180° el sin) max:56.0 rT [mΩ] (@Tvj max) max:0.75 Clamping force [kn] min max:5.0 10.0 ITAVM:424 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):424/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.10/1.5 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):205.0 ITSM [A] (@10ms, Tvj max):6400.0 VT/IT [V/kA] (@Tvj max):2.10/1.5 Clamping force [kn] min max:5.0 10.0 tq [µs]:220.0 ITSM [A] (@10ms, Tvj max):6400.0
    通用晶闸管 T360N20TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2000.0 VDRM/ VRRM (V):2000.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):360/85 rT [mΩ] (@Tvj max) max:1.6 Tvj [°C] max:125.0 ITSM:4500.0 A VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.0 RthJC [K/kW] (@180° el sin) max:44.0 RthJC [K/kW] (@180° el sin) max:44.0 rT [mΩ] (@Tvj max) max:1.6 Clamping force [kn] min max:5.0 10.0 ITAVM:360 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):360/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.88/1.1 VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.0 ITSM [A] (@10ms, Tvj max):4500.0 VT/IT [V/kA] (@Tvj max):2.88/1.1 Clamping force [kn] min max:5.0 10.0 tq [µs]:350.0 ITSM [A] (@10ms, Tvj max):4500.0
    通用晶闸管 T430N16TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0 V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):433/85 rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 ITSM:4600.0 A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 RthJC [K/kW] (@180° el sin) max:51.0 RthJC [K/kW] (@180° el sin) max:51.0 rT [mΩ] (@Tvj max) max:0.9 Clamping force [kn] min max:4.0 8.0 ITAVM:433 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):433/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 ITSM [A] (@10ms, Tvj max):4600.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 Clamping force [kn] min max:4.0 8.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):4600.0
    通用晶闸管 T430N18TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1800.0 VDRM/ VRRM (V):1800.0V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):433/85 rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 ITSM:4600.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 RthJC [K/kW] (@180° el sin) max:51.0 RthJC [K/kW] (@180° el sin) max:51.0 rT [mΩ] (@Tvj max) max:0.9 Clamping force [kn] min max:4.0 8.0 ITAVM:433 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):433/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 ITSM [A] (@10ms, Tvj max):4600.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 Clamping force [kn] min max:4.0 8.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):4600.0
    通用晶闸管 T1081N65TOH Infineon(英飞凌) 不重复通态电流:35000A 额定重复关闭状态电压 VDRM:6500V 关闭状态漏泄电流（在 VDRM IDRM 下）:400mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:1.8A 工作温度:-40°C ~ 125°C
    通用晶闸管 T560N14TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0 V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):559/85 rT [mΩ] (@Tvj max) max:0.6 Tvj [°C] max:125.0 ITSM:6900.0A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 RthJC [K/kW] (@180° el sin) max:44.0 RthJC [K/kW] (@180° el sin) max:44.0 rT [mΩ] (@Tvj max) max:0.6 Clamping force [kn] min max:5.0 10.0 ITAVM:595 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):559/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 ITSM [A] (@10ms, Tvj max):6900.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 Clamping force [kn] min max:5.0 10.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):6900.0
    通用晶闸管 T1080N06TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:600.0 VDRM/ VRRM (V):600.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1075/85 rT [mΩ] (@Tvj max) max:0.2 Tvj [°C] max:140.0 ITSM:14500.0 A VT0 [V] (@Tvj max) max:1.02 ∫I2dt [A²s · 103] (@10ms, Tvj max):1050.0 RthJC [K/kW] (@180° el sin) max:33.0 RthJC [K/kW] (@180° el sin) max:33.0 rT [mΩ] (@Tvj max) max:0.2 Clamping force [kn] min max:8.0 16.0 ITAVM:1075 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1075/85 Tvj [°C] max:140.0 VT/IT [V/kA] (@Tvj max):1.81/3.5 VT0 [V] (@Tvj max) max:1.02 ∫I2dt [A²s · 103] (@10ms, Tvj max):1050.0 ITSM [A] (@10ms, Tvj max):14500.0 VT/IT [V/kA] (@Tvj max):1.81/3.5 Clamping force [kn] min max:8.0 16.0 tq [µs]:150.0 ITSM [A] (@10ms, Tvj max):14500.0
    通用晶闸管 T660N22TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2200.0 VDRM/ VRRM (V):2200.0V Housing:Disc dia 58mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):659/85 rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:125.0 ITSM:11500.0A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):660.0 RthJC [K/kW] (@180° el sin) max:33.0 Clamping force [kn] min max:10.5 21.0 ITAVM:659 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.53/2.85 ITSM [A] (@10ms, Tvj max):11500.0 tq [µs]:300.0
    通用晶闸管 T470N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0 V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):470/85 rT [mΩ] (@Tvj max) max:0.75 Tvj [°C] max:125.0 ITSM:6350.0 A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):202.0 RthJC [K/kW] (@180° el sin) max:51.0 RthJC [K/kW] (@180° el sin) max:51.0 rT [mΩ] (@Tvj max) max:0.75 Clamping force [kn] min max:4.0 8.0 ITAVM:470 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):470/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.85/1.2 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):202.0 ITSM [A] (@10ms, Tvj max):6350.0 VT/IT [V/kA] (@Tvj max):1.85/1.2 Clamping force [kn] min max:4.0 8.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):6350.0
    通用晶闸管 T360N22TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2200.0 VDRM/ VRRM (V):2200.0 V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):360/85 rT [mΩ] (@Tvj max) max:1.6 Tvj [°C] max:125.0 ITSM:4500.0 A VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.0 RthJC [K/kW] (@180° el sin) max:44.0 RthJC [K/kW] (@180° el sin) max:44.0 rT [mΩ] (@Tvj max) max:1.6 Clamping force [kn] min max:5.0 10.0 ITAVM:360 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):360/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.88/1.1 VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.0 ITSM [A] (@10ms, Tvj max):4500.0 VT/IT [V/kA] (@Tvj max):2.88/1.1 Clamping force [kn] min max:5.0 10.0 tq [µs]:350.0 ITSM [A] (@10ms, Tvj max):4500.0
    通用晶闸管 T640N18TOF Infineon(英飞凌) 额定重复关闭状态电压 VDRM:1.8KV 关闭状态漏泄电流（在 VDRM IDRM 下）:50mA 开启状态RMS电流 - It RMS:1.45kA Vf - 正向电压:2.15V 栅极触发电压-Vgt:2.2V 栅极触发电流-Igt:250mA 保持电流Ih最大值:300mA 包装方式:Tray 不重复通态电流:9.4kA 工作温度:-40°C ~ 125°C
    通用晶闸管 T640N16TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0 V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):644/85 rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:125.0 ITSM:8000.0 A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):320.0 RthJC [K/kW] (@180° el sin) max:39.0 RthJC [K/kW] (@180° el sin) max:39.0 rT [mΩ] (@Tvj max) max:0.5 Clamping force [kn] min max:6.0 12.0 ITAVM:644 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):644/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.15/2.4 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):320.0 ITSM [A] (@10ms, Tvj max):8000.0 VT/IT [V/kA] (@Tvj max):2.15/2.4 Clamping force [kn] min max:6.0 12.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):8000.0
    通用晶闸管 T1330N20TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2000.0 VDRM/ VRRM (V):2000.0V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1329/85 rT [mΩ] (@Tvj max) max:0.234 Tvj [°C] max:125.0 ITSM:23000.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):2645.0 RthJC [K/kW] (@180° el sin) max:18.4 RthJC [K/kW] (@180° el sin) max:18.4 rT [mΩ] (@Tvj max) max:0.234 Clamping force [kn] min max:20.0 45.0 ITAVM:1329 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1329/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.13/1.0 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):2645.0 ITSM [A] (@10ms, Tvj max):23000.0 VT/IT [V/kA] (@Tvj max):1.13/1.0 Clamping force [kn] min max:20.0 45.0 tq [µs]:300.0 ITSM [A] (@10ms, Tvj max):23000.0
    通用晶闸管 T730N40TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:4000.0 VDRM/ VRRM (V):4000.0 V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):730/85 rT [mΩ] (@Tvj max) max:0.57 Tvj [°C] max:120.0 ITSM:15800.0 A VT0 [V] (@Tvj max) max:1.2 ∫I2dt [A²s · 103] (@10ms, Tvj max):1250.0 RthJC [K/kW] (@180° el sin) max:21.5 Clamping force [kn] min max:18.0 43.0 ITAVM:730 (180 ° el sin) VT/IT [V/kA] (@Tvj max):3.40/3.5 ITSM [A] (@10ms, Tvj max):15800.0 tq [µs]:400.0
    通用晶闸管 T2001N34TOF Infineon(英飞凌) 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:3400.0 VDRM/ VRRM (V):3400.0V Housing:Disc dia 120mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2060/85 rT [mΩ] (@Tvj max) max:0.25 Tvj [°C] max:125.0 ITSM:41000.0 A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):8400.0 RthJC [K/kW] (@180° el sin) max:8.7 Clamping force [kn] min max:36.0 52.0 ITAVM:2060 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.50/2.0 ITSM [A] (@10ms, Tvj max):41000.0 tq [µs]:300.0
    通用晶闸管 T345N18EOF Infineon(英飞凌) 不重复通态电流:8000A 额定重复关闭状态电压 VDRM:1800V 关闭状态漏泄电流（在 VDRM IDRM 下）:80mA 保持电流Ih最大值:300mA 栅极触发电压-Vgt:2V 栅极触发电流-Igt:200mA 包装方式:Tray 电流额定值:345A 工作温度:-40°C ~ 125°C
    通用晶闸管 T1081N70TOH Infineon(英飞凌) 不重复通态电流:35000A 额定重复关闭状态电压 VDRM:7000V 关闭状态漏泄电流（在 VDRM IDRM 下）:400mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:1.8A 工作温度:-40°C ~ 125°C
    通用晶闸管 T2251N80TOH Infineon(英飞凌) 不重复通态电流:67000A 额定重复关闭状态电压 VDRM:8000V 关闭状态漏泄电流（在 VDRM IDRM 下）:600mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:3.08A 工作温度:-40°C ~ 125°C
    通用晶闸管 T2160N26TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2600.0 VDRM/ VRRM (V):2600.0V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2400/85 rT [mΩ] (@Tvj max) max:0.154 Tvj [°C] max:125.0 ITSM:40000.0 A VT0 [V] (@Tvj max) max:1.05 ∫I2dt [A²s · 103] (@10ms, Tvj max):8000.0 RthJC [K/kW] (@180° el sin) max:8.5 Clamping force [kn] min max:42.0 95.0 ITAVM:2400 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.65/8.8 ITSM [A] (@10ms, Tvj max):40000.0 tq [µs]:400.0
    通用晶闸管 T3160N18TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1800.0 VDRM/ VRRM (V):1800.0 V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):3160/85 rT [mΩ] (@Tvj max) max:0.082 Tvj [°C] max:125.0 ITSM:57000.0 A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):16245.0 RthJC [K/kW] (@180° el sin) max:8.5 RthJC [K/kW] (@180° el sin) max:8.5 rT [mΩ] (@Tvj max) max:0.082 Clamping force [kn] min max:42.0 95.0 ITAVM:3160 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):3160/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.37/6.0 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):16245.0 ITSM [A] (@10ms, Tvj max):57000.0 VT/IT [V/kA] (@Tvj max):1.37/6.0 Clamping force [kn] min max:42.0 95.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):57000.0
    通用晶闸管 T2001N36TOF Infineon(英飞凌) 不重复通态电流:44000A 额定重复关闭状态电压 VDRM:3600V 关闭状态漏泄电流（在 VDRM IDRM 下）:400mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:2.84A 工作温度:-40°C ~ 125°C
    通用晶闸管 T501N70TOH Infineon(英飞凌) 不重复通态电流:13500A 额定重复关闭状态电压 VDRM:7000V 关闭状态漏泄电流（在 VDRM IDRM 下）:200mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:860A 工作温度:-40°C ~ 125°C
    通用晶闸管 T1081N60TOH Infineon(英飞凌) 不重复通态电流:35000A 额定重复关闭状态电压 VDRM:6000V 关闭状态漏泄电流（在 VDRM IDRM 下）:400mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:1.8A 工作温度:-40°C ~ 125°C
    通用晶闸管 T1601N35TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:3500.0 VDRM/ VRRM (V):3500.0V Housing:Disc dia 120mm height 35mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1900/85 rT [mΩ] (@Tvj max) max:0.25 Tvj [°C] max:125.0 ITSM:44000.0A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):8400.0 RthJC [K/kW] (@180° el sin) max:9.0 Clamping force [kn] min max:36.0 52.0 ITAVM:1900 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.50/2.0 ITSM [A] (@10ms, Tvj max):44000.0 tq [µs]:300.0
    通用晶闸管 T1851N70TOH Infineon(英飞凌) 不重复通态电流:50000A 额定重复关闭状态电压 VDRM:7000V 关闭状态漏泄电流（在 VDRM IDRM 下）:500mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:2.51A 工作温度:-40°C ~ 125°C
    通用晶闸管 VS-70TPS16PBF Vishay(威世) 电压 - 断态:1.6KV 电压 - 栅极触发（Vgt）（最大值）:1.5V 电流 - 栅极触发（Igt）（最大值）:100mA 电压 - 通态（Vtm）（最大值）:1.4V 电流 - 通态（It（AV））（最大值）:70A 电流 - 通态（It（RMS））（最大值）:75A 电流 - 保持（Ih）（最大值）:200mA 电流 - 断态（最大值）:1mA 电流 - 不重复浪涌 50，60Hz（Itsm）:1400A @ 50Hz SCR 类型:标准恢复型 工作温度:-40°C ~ 125°C 封装/外壳:SUPER-247(TO-274AA) 基本零件编号:70TPS*
    通用晶闸管 T1590N26TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2600.0 VDRM/ VRRM (V):2600.0 V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1590/85 rT [mΩ] (@Tvj max) max:0.237 Tvj [°C] max:125.0 ITSM:28000.0A VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):3920.0 RthJC [K/kW] (@180° el sin) max:12.5 Clamping force [kn] min max:30.0 65.0 ITAVM:1590 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.45/5.0 ITSM [A] (@10ms, Tvj max):28000.0 tq [µs]:400.0
    通用晶闸管 T1590N22TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2200.0 VDRM/ VRRM (V):2200.0 V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1590/85 rT [mΩ] (@Tvj max) max:0.237 Tvj [°C] max:125.0 ITSM:28000.0A VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):3920.0 RthJC [K/kW] (@180° el sin) max:12.5 Clamping force [kn] min max:30.0 65.0 ITAVM:1590 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.45/5.0 ITSM [A] (@10ms, Tvj max):28000.0 tq [µs]:400.0
    通用晶闸管 T420N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0 V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):424/85 rT [mΩ] (@Tvj max) max:0.75 Tvj [°C] max:125.0 ITSM:6400.0A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):205.0 RthJC [K/kW] (@180° el sin) max:56.0 RthJC [K/kW] (@180° el sin) max:56.0 rT [mΩ] (@Tvj max) max:0.75 Clamping force [kn] min max:5.0 10.0 ITAVM:424 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):424/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.10/1.5 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):205.0 ITSM [A] (@10ms, Tvj max):6400.0 VT/IT [V/kA] (@Tvj max):2.10/1.5 Clamping force [kn] min max:5.0 10.0 tq [µs]:220.0 ITSM [A] (@10ms, Tvj max):6400.0
    通用晶闸管 T2251N70TOH Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:7000.0 VDRM/ VRRM (V):7000.0 V Housing:Disc dia 150mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2260/85 rT [mΩ] (@Tvj max) max:0.44 Tvj [°C] max:125.0 ITSM:65000.0 A VT0 [V] (@Tvj max) max:1.24 ∫I2dt [A²s · 103] (@10ms, Tvj max):21100.0 RthJC [K/kW] (@180° el sin) max:4.8 Clamping force [kn] min max:63.0 91.0 ITAVM:2260 (180 ° el sin) VT/IT [V/kA] (@Tvj max):3.0/4.0 ITSM [A] (@10ms, Tvj max):65000.0 tq [µs]:550.0
    通用晶闸管 T880N12TOF Infineon(英飞凌) 额定重复关闭状态电压 VDRM:1.2KV 关闭状态漏泄电流（在 VDRM IDRM 下）:100mA 开启状态RMS电流 - It RMS:2.02kA Vf - 正向电压:1.95V 栅极触发电压-Vgt:2.2V 栅极触发电流-Igt:250mA 保持电流Ih最大值:300mA 包装方式:Tray 不重复通态电流:17.5kA 工作温度:-40°C ~ 125°C
    通用晶闸管 T940N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0V Housing:Disc dia 58mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):959/85 rT [mΩ] (@Tvj max) max:0.27 Tvj [°C] max:125.0 ITSM:15500.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):1200.0 RthJC [K/kW] (@180° el sin) max:28.0 Clamping force [kn] min max:10.5 21.0 ITAVM:936 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.95/3.6 ITSM [A] (@10ms, Tvj max):15500.0 tq [µs]:250.0
    通用晶闸管 T560N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):559/85 rT [mΩ] (@Tvj max) max:0.6 Tvj [°C] max:125.0 ITSM:6900.0 A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 RthJC [K/kW] (@180° el sin) max:44.0 RthJC [K/kW] (@180° el sin) max:44.0 rT [mΩ] (@Tvj max) max:0.6 Clamping force [kn] min max:5.0 10.0 ITAVM:595 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):559/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 ITSM [A] (@10ms, Tvj max):6900.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 Clamping force [kn] min max:5.0 10.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):6900.0
    通用晶闸管 T720N12TOF Infineon(英飞凌) 额定重复关闭状态电压 VDRM:1.2KV 关闭状态漏泄电流（在 VDRM IDRM 下）:80mA 开启状态RMS电流 - It RMS:1.65kA Vf - 正向电压:1.94V 栅极触发电压-Vgt:1.5V 栅极触发电流-Igt:250mA 保持电流Ih最大值:300mA 包装方式:Tray 不重复通态电流:14.5kA 工作温度:-40°C ~ 125°C
    通用晶闸管 T4021N52TOH Infineon(英飞凌) 不重复通态电流:105000A 额定重复关闭状态电压 VDRM:5200V 关闭状态漏泄电流（在 VDRM IDRM 下）:900mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:3.5V 包装方式:Tray 电流额定值:5.4A 工作温度:-40°C ~ 125°C
    通用晶闸管 T880N14TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0V Housing:Disc dia 58mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):879/85 rT [mΩ] (@Tvj max) max:0.27 Tvj [°C] max:125.0 ITSM:15500.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):1200.0 RthJC [K/kW] (@180° el sin) max:32.0 Clamping force [kn] min max:10.5 21.0 ITAVM:879 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.95/3.6 ITSM [A] (@10ms, Tvj max):15500.0 tq [µs]:250.0
    通用晶闸管 T1960N20TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2000.0 VDRM/ VRRM (V):2000.0V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1960/85 rT [mΩ] (@Tvj max) max:0.15 Tvj [°C] max:125.0 ITSM:35000.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):6125.0 RthJC [K/kW] (@180° el sin) max:12.5 Clamping force [kn] min max:30.0 65.0 ITAVM:1960 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.20/8.0 ITSM [A] (@10ms, Tvj max):35000.0 tq [µs]:300.0
    通用晶闸管 T880N18TOF Infineon(英飞凌) 额定重复关闭状态电压 VDRM:1.8KV 关闭状态漏泄电流（在 VDRM IDRM 下）:100mA 开启状态RMS电流 - It RMS:2.02kA Vf - 正向电压:1.95V 栅极触发电压-Vgt:2.2V 栅极触发电流-Igt:250mA 保持电流Ih最大值:300mA 包装方式:Tray 不重复通态电流:17.5kA 工作温度:-40°C ~ 125°C
    通用晶闸管 TT240N38KOF Infineon(英飞凌) 不重复通态电流:6100A 额定重复关闭状态电压 VDRM:3800V 关闭状态漏泄电流（在 VDRM IDRM 下）:250mA 保持电流Ih最大值:300mA 栅极触发电压-Vgt:1.5V 包装方式:Tray 电流额定值:446A 工作温度:-40°C ~ 125°C
    通用晶闸管 T1220N22TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2200.0 VDRM/ VRRM (V):2200.0V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1220/85 rT [mΩ] (@Tvj max) max:0.275 Tvj [°C] max:125.0 ITSM:22500.0A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):2531.0 RthJC [K/kW] (@180° el sin) max:18.4 Clamping force [kn] min max:20.0 45.0 ITAVM:1220 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.38/1.0 ITSM [A] (@10ms, Tvj max):22500.0 tq [µs]:350.0
    通用晶闸管 T390N14TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0 V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):381/85 rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 ITSM:4250.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):91.0 RthJC [K/kW] (@180° el sin) max:62.0 RthJC [K/kW] (@180° el sin) max:62.0 rT [mΩ] (@Tvj max) max:0.9 Clamping force [kn] min max:3.0 6.0 ITAVM:381 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):381/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.00/1.1 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):91.0 ITSM [A] (@10ms, Tvj max):4250.0 VT/IT [V/kA] (@Tvj max):2.00/1.1 Clamping force [kn] min max:3.0 6.0 tq [µs]:200.0 ITSM [A] (@10ms, Tvj max):4250.0
    通用晶闸管 TD180N16KOF Infineon(英飞凌) 不重复通态电流:4800A 额定重复关闭状态电压 VDRM:1600V 关闭状态漏泄电流（在 VDRM IDRM 下）:50mA 保持电流Ih最大值:200mA 栅极触发电压-Vgt:2V 栅极触发电流-Igt:150mA 包装方式:Tray 电流额定值:180A 工作温度:-40°C ~ 130°C
    通用晶闸管 T2510N06TOF VT Infineon(英飞凌) 额定重复关闭状态电压 VDRM:600V 关闭状态漏泄电流（在 VDRM IDRM 下）:150mA 开启状态RMS电流 - It RMS:5.35kA Vf - 正向电压:1.22V 栅极触发电压-Vgt:1.5V 栅极触发电流-Igt:250mA 保持电流Ih最大值:300mA 包装方式:Tray 不重复通态电流:46kA 工作温度:-40°C ~ 140°C
    通用晶闸管 TD92N16KOF Infineon(英飞凌) 开启状态RMS电流 - It RMS:160A 不重复通态电流:2050A 额定重复关闭状态电压 VDRM:1600V 关闭状态漏泄电流（在 VDRM IDRM 下）:25mA 开启状态电压:1.62V 保持电流Ih最大值:200mA 栅极触发电压-Vgt:1.4V 栅极触发电流-Igt:120mA 包装方式:Tray 电流额定值:104A 工作温度:-40°C ~ 130°C
    通用晶闸管 T920N02TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:200.0 VDRM/ VRRM (V):200.0 V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):925/85 rT [mΩ] (@Tvj max) max:0.23 Tvj [°C] max:140.0 ITSM:12000.0 A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):720.0 RthJC [K/kW] (@180° el sin) max:39.0 RthJC [K/kW] (@180° el sin) max:39.0 rT [mΩ] (@Tvj max) max:0.23 Clamping force [kn] min max:5.5 8.0 ITAVM:925 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):925/85 Tvj [°C] max:140.0 VT/IT [V/kA] (@Tvj max):1.65/2.5 VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):720.0 ITSM [A] (@10ms, Tvj max):12000.0 VT/IT [V/kA] (@Tvj max):1.65/2.5 Clamping force [kn] min max:5.5 8.0 tq [µs]:150.0 ITSM [A] (@10ms, Tvj max):12000.0
    通用晶闸管 TD140N18KOF Infineon(英飞凌) 不重复通态电流:4000A 额定重复关闭状态电压 VDRM:1800V 关闭状态漏泄电流（在 VDRM IDRM 下）:30mA 保持电流Ih最大值:200mA 栅极触发电压-Vgt:2V 栅极触发电流-Igt:150mA 包装方式:Tray 电流额定值:159A 工作温度:-40°C ~ 125°C
    通用晶闸管 T2160N20TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2000.0 VDRM/ VRRM (V):2000.0 V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2400/85 rT [mΩ] (@Tvj max) max:0.154 Tvj [°C] max:125.0 ITSM:40000.0 A VT0 [V] (@Tvj max) max:1.05 ∫I2dt [A²s · 103] (@10ms, Tvj max):8000.0 RthJC [K/kW] (@180° el sin) max:8.5 RthJC [K/kW] (@180° el sin) max:8.5 rT [mΩ] (@Tvj max) max:0.154 Clamping force [kn] min max:42.0 95.0 ITAVM:2400 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):2400/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.65/8.8 VT0 [V] (@Tvj max) max:1.05 ∫I2dt [A²s · 103] (@10ms, Tvj max):8000.0 ITSM [A] (@10ms, Tvj max):40000.0 VT/IT [V/kA] (@Tvj max):2.65/8.8 Clamping force [kn] min max:42.0 95.0 tq [µs]:400.0 ITSM [A] (@10ms, Tvj max):40000.0
    通用晶闸管 T2180N16TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2180/85 rT [mΩ] (@Tvj max) max:0.106 Tvj [°C] max:125.0 ITSM:36000.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):6480.0 RthJC [K/kW] (@180° el sin) max:12.5 RthJC [K/kW] (@180° el sin) max:12.5 rT [mΩ] (@Tvj max) max:0.106 Clamping force [kn] min max:30.0 65.0 ITAVM:2180 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):2180/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.05/8.0 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):6480.0 ITSM [A] (@10ms, Tvj max):36000.0 VT/IT [V/kA] (@Tvj max):2.05/8.0 Clamping force [kn] min max:30.0 65.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):36000.0
    通用晶闸管 T640N14TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):644/85 rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:125.0 ITSM:8000.0A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):320.0 RthJC [K/kW] (@180° el sin) max:39.0 RthJC [K/kW] (@180° el sin) max:39.0 rT [mΩ] (@Tvj max) max:0.5 Clamping force [kn] min max:6.0 12.0 ITAVM:644 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):644/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.15/2.4 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):320.0 ITSM [A] (@10ms, Tvj max):8000.0 VT/IT [V/kA] (@Tvj max):2.15/2.4 Clamping force [kn] min max:6.0 12.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):8000.0
    通用晶闸管 T2160N28TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2800.0 VDRM/ VRRM (V):2800.0V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2400/85 rT [mΩ] (@Tvj max) max:0.154 Tvj [°C] max:125.0 ITSM:40000.0 A VT0 [V] (@Tvj max) max:1.05 ∫I2dt [A²s · 103] (@10ms, Tvj max):8000.0 RthJC [K/kW] (@180° el sin) max:8.5 RthJC [K/kW] (@180° el sin) max:8.5 rT [mΩ] (@Tvj max) max:0.154 Clamping force [kn] min max:42.0 95.0 ITAVM:2400 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):2400/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.65/8.8 VT0 [V] (@Tvj max) max:1.05 ∫I2dt [A²s · 103] (@10ms, Tvj max):8000.0 ITSM [A] (@10ms, Tvj max):40000.0 VT/IT [V/kA] (@Tvj max):2.65/8.8 Clamping force [kn] min max:42.0 95.0 tq [µs]:400.0 ITSM [A] (@10ms, Tvj max):40000.0
    通用晶闸管 T1220N26TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2600.0 VDRM/ VRRM (V):2600.0 V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1220/85 rT [mΩ] (@Tvj max) max:0.275 Tvj [°C] max:125.0 ITSM:22500.0 A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):2531.0 RthJC [K/kW] (@180° el sin) max:18.4 RthJC [K/kW] (@180° el sin) max:18.4 rT [mΩ] (@Tvj max) max:0.275 Clamping force [kn] min max:20.0 45.0 ITAVM:1220 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1220/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.38/1.0 VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):2531.0 ITSM [A] (@10ms, Tvj max):22500.0 VT/IT [V/kA] (@Tvj max):1.38/1.0 Clamping force [kn] min max:20.0 45.0 tq [µs]:350.0 ITSM [A] (@10ms, Tvj max):22500.0
    通用晶闸管 T2180N12TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0 V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2180/85 rT [mΩ] (@Tvj max) max:0.106 Tvj [°C] max:125.0 ITSM:36000.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):6480.0 RthJC [K/kW] (@180° el sin) max:12.5 RthJC [K/kW] (@180° el sin) max:12.5 rT [mΩ] (@Tvj max) max:0.106 Clamping force [kn] min max:30.0 65.0 ITAVM:2180 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):2180/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.05/8.0 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):6480.0 ITSM [A] (@10ms, Tvj max):36000.0 VT/IT [V/kA] (@Tvj max):2.05/8.0 Clamping force [kn] min max:30.0 65.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):36000.0
    通用晶闸管 T2180N14TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0 V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2180/85 rT [mΩ] (@Tvj max) max:0.106 Tvj [°C] max:125.0 ITSM:36000.0A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):6480.0 RthJC [K/kW] (@180° el sin) max:12.5 RthJC [K/kW] (@180° el sin) max:12.5 rT [mΩ] (@Tvj max) max:0.106 Clamping force [kn] min max:30.0 65.0 ITAVM:2180 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):2180/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.05/8.0 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):6480.0 ITSM [A] (@10ms, Tvj max):36000.0 VT/IT [V/kA] (@Tvj max):2.05/8.0 Clamping force [kn] min max:30.0 65.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):36000.0
    通用晶闸管 T1220N28TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2800.0 VDRM/ VRRM (V):2800.0 V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1220/85 rT [mΩ] (@Tvj max) max:0.275 Tvj [°C] max:125.0 ITSM:22500.0A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):2531.0 RthJC [K/kW] (@180° el sin) max:18.4 RthJC [K/kW] (@180° el sin) max:18.4 rT [mΩ] (@Tvj max) max:0.275 Clamping force [kn] min max:20.0 45.0 ITAVM:1220 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1220/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.38/1.0 VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):2531.0 ITSM [A] (@10ms, Tvj max):22500.0 VT/IT [V/kA] (@Tvj max):1.38/1.0 Clamping force [kn] min max:20.0 45.0 tq [µs]:350.0 ITSM [A] (@10ms, Tvj max):22500.0
    通用晶闸管 TD140N22KOF Infineon(英飞凌) 不重复通态电流:4000A 额定重复关闭状态电压 VDRM:2200V 关闭状态漏泄电流（在 VDRM IDRM 下）:30mA 保持电流Ih最大值:200mA 栅极触发电压-Vgt:2V 栅极触发电流-Igt:150mA 包装方式:Tray 电流额定值:159A 工作温度:-40°C ~ 125°C
    通用晶闸管 T1401N42TOH Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:4200.0 VDRM/ VRRM (V):4200.0V Housing:Disc dia 120mm height 35mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1590/85 rT [mΩ] (@Tvj max) max:0.33 Tvj [°C] max:125.0 ITSM:36000.0A VT0 [V] (@Tvj max) max:1.29 ∫I2dt [A²s · 103] (@10ms, Tvj max):6480.0 RthJC [K/kW] (@180° el sin) max:9.7 RthJC [K/kW] (@180° el sin) max:9.7 rT [mΩ] (@Tvj max) max:0.33 Clamping force [kn] min max:36.0 52.0 ITAVM:1550 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1590/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.95/2.0 VT0 [V] (@Tvj max) max:1.29 ∫I2dt [A²s · 103] (@10ms, Tvj max):6480.0 ITSM [A] (@10ms, Tvj max):36000.0 VT/IT [V/kA] (@Tvj max):1.95/2.0 Clamping force [kn] min max:36.0 52.0 tq [µs]:350.0 ITSM [A] (@10ms, Tvj max):36000.0
    通用晶闸管 T860N30TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:3000.0 VDRM/ VRRM (V):3000.0V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):860/85 rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:125.0 ITSM:17000.0A VT0 [V] (@Tvj max) max:1.08 ∫I2dt [A²s · 103] (@10ms, Tvj max):1445.0 RthJC [K/kW] (@180° el sin) max:21.0 Clamping force [kn] min max:20.0 45.0 ITAVM:860 (180 ° el sin) VT/IT [V/kA] (@Tvj max):3.18/3.8 ITSM [A] (@10ms, Tvj max):17000.0 tq [µs]:400.0
    通用晶闸管 T3710N06TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:600.0 VDRM/ VRRM (V):600.0V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):3710/85 rT [mΩ] (@Tvj max) max:0.048 Tvj [°C] max:140.0 ITSM:60000.0 A VT0 [V] (@Tvj max) max:0.75 ∫I2dt [A²s · 103] (@10ms, Tvj max):18000.0 RthJC [K/kW] (@180° el sin) max:12.5 RthJC [K/kW] (@180° el sin) max:12.5 rT [mΩ] (@Tvj max) max:0.048 Clamping force [kn] min max:30.0 65.0 ITAVM:3710 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):3710/85 Tvj [°C] max:140.0 VT/IT [V/kA] (@Tvj max):1.50/15.0 VT0 [V] (@Tvj max) max:0.75 ∫I2dt [A²s · 103] (@10ms, Tvj max):18000.0 ITSM [A] (@10ms, Tvj max):60000.0 VT/IT [V/kA] (@Tvj max):1.50/15.0 Clamping force [kn] min max:30.0 65.0 tq [µs]:200.0 ITSM [A] (@10ms, Tvj max):60000.0
    通用晶闸管 T930N36TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:3600.0 VDRM/ VRRM (V):3600.0V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):930/85 rT [mΩ] (@Tvj max) max:0.43 Tvj [°C] max:125.0 ITSM:17500.0 A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):1530.0 RthJC [K/kW] (@180° el sin) max:21.5 RthJC [K/kW] (@180° el sin) max:21.5 rT [mΩ] (@Tvj max) max:0.43 Clamping force [kn] min max:20.0 45.0 ITAVM:930 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):930/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.70/3.6 VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):1530.0 ITSM [A] (@10ms, Tvj max):17500.0 VT/IT [V/kA] (@Tvj max):2.70/3.6 Clamping force [kn] min max:20.0 45.0 tq [µs]:500.0 ITSM [A] (@10ms, Tvj max):17500.0
    通用晶闸管 T700N20TOF Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2000.0 VDRM/ VRRM (V):2000.0V Housing:Disc dia 58mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):699/85 rT [mΩ] (@Tvj max) max:0.45 Tvj [°C] max:125.0 ITSM:12200.0A VT0 [V] (@Tvj max) max:0.95 ∫I2dt [A²s · 103] (@10ms, Tvj max):744.0 RthJC [K/kW] (@180° el sin) max:32.0 Clamping force [kn] min max:10.5 21.0 ITAVM:699 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.32/2.85 ITSM [A] (@10ms, Tvj max):12200.0 tq [µs]:300.0
    通用晶闸管 T1220N20TOF VT Infineon(英飞凌) 零件号别名:T1220N20TOF RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2000.0 VDRM/ VRRM (V):2000.0V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1220/85 rT [mΩ] (@Tvj max) max:0.275 Tvj [°C] max:125.0 ITSM:22500.0A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):2531.0 RthJC [K/kW] (@180° el sin) max:18.4 Clamping force [kn] min max:20.0 45.0 ITAVM:1220 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.38/1.0 ITSM [A] (@10ms, Tvj max):22500.0 tq [µs]:350.0
    通用晶闸管 T221N18BOF Infineon(英飞凌) 不重复通态电流:6500A 额定重复关闭状态电压 VDRM:1800V 关闭状态漏泄电流（在 VDRM IDRM 下）:50mA 保持电流Ih最大值:300mA 栅极触发电压-Vgt:2V 栅极触发电流-Igt:200mA 包装方式:Tray 电流额定值:285A 工作温度:-40°C ~ 125°C
    通用晶闸管 T300N10TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1000.0 VDRM/ VRRM (V):1000.0 V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):303/85 rT [mΩ] (@Tvj max) max:1.35 Tvj [°C] max:125.0 ITSM:3400.0A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):58.0 RthJC [K/kW] (@180° el sin) max:69.0 RthJC [K/kW] (@180° el sin) max:69.0 rT [mΩ] (@Tvj max) max:1.35 Clamping force [kn] min max:2.5 5.0 ITAVM:303 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):303/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.20/0.8 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):58.0 ITSM [A] (@10ms, Tvj max):3400.0 VT/IT [V/kA] (@Tvj max):2.20/0.8 Clamping force [kn] min max:2.5 5.0 tq [µs]:200.0 ITSM [A] (@10ms, Tvj max):3400.0
    通用晶闸管 T1220N24TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2400.0 VDRM/ VRRM (V):2400.0 V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1220/85 rT [mΩ] (@Tvj max) max:0.275 Tvj [°C] max:125.0 ITSM:22500.0A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):2531.0 RthJC [K/kW] (@180° el sin) max:18.4 RthJC [K/kW] (@180° el sin) max:18.4 rT [mΩ] (@Tvj max) max:0.275 Clamping force [kn] min max:20.0 45.0 ITAVM:1220 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1220/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.38/1.0 VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):2531.0 ITSM [A] (@10ms, Tvj max):22500.0 VT/IT [V/kA] (@Tvj max):1.38/1.0 Clamping force [kn] min max:20.0 45.0 tq [µs]:350.0 ITSM [A] (@10ms, Tvj max):22500.0
    通用晶闸管 TD330N16KOF Infineon(英飞凌) 开启状态RMS电流 - It RMS:520A 不重复通态电流:9100A 额定重复关闭状态电压 VDRM:1600V 关闭状态漏泄电流（在 VDRM IDRM 下）:70mA 开启状态电压:1.44V 保持电流Ih最大值:300mA 栅极触发电压-Vgt:2V 栅极触发电流-Igt:200mA 包装方式:Tray 电流额定值:330A 工作温度:-40°C ~ 135°C
    通用晶闸管 T590N12TOF Infineon(英飞凌) 额定重复关闭状态电压 VDRM:1.2KV 关闭状态漏泄电流（在 VDRM IDRM 下）:50mA 开启状态RMS电流 - It RMS:1.33kA Vf - 正向电压:2.15V 栅极触发电压-Vgt:2.2V 栅极触发电流-Igt:250mA 保持电流Ih最大值:300mA 包装方式:Tray 不重复通态电流:9.4kA 工作温度:-40°C ~ 125°C
    通用晶闸管 TT61N16KOF Infineon(英飞凌) 系列:TT61N 保持电流Ih最大值:200mA 栅极触发电流-Igt:120mA RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:SCR / SCR Phase Control VDRM / VRRM [V]:1600.0 IFSM / ITSM [A] (@10ms, Tvj max):1400.0 VDRM/ VRRM (V):1600.0 V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0 Housing:Power Block 20 mm rT [mΩ] (@Tvj max) max:3.4 Tvj [°C] max:125.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):60/85 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):9.8 RthJC [K/W] (@180° el sin) max:0.52 RthJC [K/W] (@180° el sin) max:0.52 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):60/85 IFSM / ITSM:1400.0A IFAVM / TC / ITAVM / TC:60/85 (180° el sin) A/°C rT [mΩ] (@Tvj max) max:3.4 Tvj [°C] max:125.0 IFSM / ITSM [A] (@10ms, Tvj max):1400.0 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):9.8 (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0
    通用晶闸管 TZ600N16KOF Infineon(英飞凌) 封装/外壳:BG-PB501-1 额定电流:669 A 导通状态RMS电流 - It RMS:1050 A 非重复通态电流:17000 A 重复关断状态的额定电压VDRM:1600 V 关断状态泄露电流@ VDRM IDRM:140 mA 关断状态电压:1.53 V 保持电流 Ih 最大:300 mA 闸极触发器电压 - Vgt:2.2 V 闸极触发器电流 - Igt:250 mA 工作温度:-40°C ~ 135°C
    通用晶闸管 T390N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0 V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):381/85 rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 ITSM:4250.0 A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):91.0 RthJC [K/kW] (@180° el sin) max:62.0 RthJC [K/kW] (@180° el sin) max:62.0 rT [mΩ] (@Tvj max) max:0.9 Clamping force [kn] min max:3.0 6.0 ITAVM:381 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):381/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.00/1.1 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):91.0 ITSM [A] (@10ms, Tvj max):4250.0 VT/IT [V/kA] (@Tvj max):2.00/1.1 Clamping force [kn] min max:3.0 6.0 tq [µs]:200.0 ITSM [A] (@10ms, Tvj max):4250.0
    通用晶闸管 TD570N16KOF Infineon(英飞凌) 不重复通态电流:17000A 额定重复关闭状态电压 VDRM:1600V 关闭状态漏泄电流（在 VDRM IDRM 下）:140mA 保持电流Ih最大值:300mA 栅极触发电压-Vgt:2.2V 栅极触发电流-Igt:250mA 包装方式:Tray 电流额定值:570A 工作温度:-40°C ~ 135°C
    通用晶闸管 T430N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):433/85 rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 ITSM:4600.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 RthJC [K/kW] (@180° el sin) max:51.0 RthJC [K/kW] (@180° el sin) max:51.0 rT [mΩ] (@Tvj max) max:0.9 Clamping force [kn] min max:4.0 8.0 ITAVM:433 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):433/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 ITSM [A] (@10ms, Tvj max):4600.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 Clamping force [kn] min max:4.0 8.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):4600.0
    通用晶闸管 T1190N16TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0 V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1190/85 rT [mΩ] (@Tvj max) max:0.19 Tvj [°C] max:125.0 ITSM:22500.0A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):2530.0 RthJC [K/kW] (@180° el sin) max:23.0 RthJC [K/kW] (@180° el sin) max:23.0 rT [mΩ] (@Tvj max) max:0.19 Clamping force [kn] min max:16.0 32.0 ITAVM:1190 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1190/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.05/5.4 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):2530.0 ITSM [A] (@10ms, Tvj max):22500.0 VT/IT [V/kA] (@Tvj max):2.05/5.4 Clamping force [kn] min max:16.0 32.0 tq [µs]:240.0 ITSM [A] (@10ms, Tvj max):22500.0
    通用晶闸管 T390N16TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):381/85 rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 ITSM:4250.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):91.0 RthJC [K/kW] (@180° el sin) max:62.0 RthJC [K/kW] (@180° el sin) max:62.0 rT [mΩ] (@Tvj max) max:0.9 Clamping force [kn] min max:3.0 6.0 ITAVM:381 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):381/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.00/1.1 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):91.0 ITSM [A] (@10ms, Tvj max):4250.0 VT/IT [V/kA] (@Tvj max):2.00/1.1 Clamping force [kn] min max:3.0 6.0 tq [µs]:200.0 ITSM [A] (@10ms, Tvj max):4250.0
    通用晶闸管 VS-30TPS12PBF Vishay(威世) 系列:VS FET类型:SCRs 零件号别名:30TPS12PBF 电流额定值:20 A Vf-正向电压:1.3 V 栅极触发电流-Igt:45 mA 电压-断态:1200V 电压-栅极触发（Vgt）（最大值）:2V 电流-栅极触发（Igt）（最大值）:45mA 电压-通态（Vtm）（最大值）:1.3V 电流-通态（It（AV））（最大值）:20A 电流-通态（It（RMS））（最大值）:30A 电流-保持（Ih）（最大值）:100mA 电流-断态（最大值）:500µA 电流-不重复浪涌50，60Hz（Itsm）:300A @ 50Hz SCR类型:标准恢复型 工作温度:-40°C ~ 125°C 封装/外壳:TO-247AC
    通用晶闸管 T2851N52TOH Infineon(英飞凌) 最大转折电流 IBO:70000 A 电流额定值:4330 A 额定重复关闭状态电压 VDRM:5200 V 关闭状态漏泄电流（在 VDRM IDRM 下）:400 mA 保持电流（Ih 最大值）:350 mA 栅触发电压 (Vgt):2.5 V 封装/外壳:BG-T15035K-1 工作温度:-40°C ~ 125°C
    通用晶闸管 T1901N80TOH Infineon(英飞凌) 最大转折电流 IBO:45000 A 电流额定值:2800 A 额定重复关闭状态电压 VDRM:8000 V 关闭状态漏泄电流（在 VDRM IDRM 下）:500 mA 保持电流（Ih 最大值）:350 mA 栅触发电压 (Vgt):2.5 V 封装/外壳:BG-T15035K-1 工作温度:-40°C ~ 125°C
    通用晶闸管 T2160N24TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2400.0 VDRM/ VRRM (V):2400.0 V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2400/85 rT [mΩ] (@Tvj max) max:0.154 Tvj [°C] max:125.0 ITSM:40000.0 A VT0 [V] (@Tvj max) max:1.05 ∫I2dt [A²s · 103] (@10ms, Tvj max):8000.0 RthJC [K/kW] (@180° el sin) max:8.5 RthJC [K/kW] (@180° el sin) max:8.5 rT [mΩ] (@Tvj max) max:0.154 Clamping force [kn] min max:42.0 95.0 ITAVM:2400 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):2400/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.65/8.8 VT0 [V] (@Tvj max) max:1.05 ∫I2dt [A²s · 103] (@10ms, Tvj max):8000.0 ITSM [A] (@10ms, Tvj max):40000.0 VT/IT [V/kA] (@Tvj max):2.65/8.8 Clamping force [kn] min max:42.0 95.0 tq [µs]:400.0 ITSM [A] (@10ms, Tvj max):40000.0
    通用晶闸管 T2480N22TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2200.0 VDRM/ VRRM (V):2200.0V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2480/85 rT [mΩ] (@Tvj max) max:0.154 Tvj [°C] max:125.0 ITSM:43500.0 A VT0 [V] (@Tvj max) max:0.95 ∫I2dt [A²s · 103] (@10ms, Tvj max):9460.0 RthJC [K/kW] (@180° el sin) max:8.5 Clamping force [kn] min max:42.0 95.0 ITAVM:2480 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.43/3.0 ITSM [A] (@10ms, Tvj max):43500.0 tq [µs]:400.0
    通用晶闸管 T1500N16TOF VT Infineon(英飞凌) 零件号别名:T1500N16TOF RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1500/85 rT [mΩ] (@Tvj max) max:0.15 Tvj [°C] max:125.0 ITSM:33500.0A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):5611.0 RthJC [K/kW] (@180° el sin) max:18.4 Clamping force [kn] min max:24.0 56.0 ITAVM:1500 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.10/7.0 ITSM [A] (@10ms, Tvj max):33500.0 tq [µs]:240.0
    通用晶闸管 T2480N24TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2400.0 VDRM/ VRRM (V):2400.0V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2480/85 rT [mΩ] (@Tvj max) max:0.154 Tvj [°C] max:125.0 ITSM:43500.0 A VT0 [V] (@Tvj max) max:0.95 ∫I2dt [A²s · 103] (@10ms, Tvj max):9460.0 RthJC [K/kW] (@180° el sin) max:8.5 Clamping force [kn] min max:42.0 95.0 ITAVM:2480 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.43/3.0 ITSM [A] (@10ms, Tvj max):43500.0 tq [µs]:400.0
    通用晶闸管 T901N35TOF Infineon(英飞凌) 不重复通态电流:19000A 额定重复关闭状态电压 VDRM:3500V 关闭状态漏泄电流（在 VDRM IDRM 下）:200mA 保持电流Ih最大值:300mA 栅极触发电压-Vgt:2.5V 栅极触发电流-Igt:350mA 包装方式:Tray 电流额定值:1.3A 工作温度:-40°C ~ 125°C
    通用晶闸管 T901N36TOF Infineon(英飞凌) 不重复通态电流:19000A 额定重复关闭状态电压 VDRM:3600V 关闭状态漏泄电流（在 VDRM IDRM 下）:200mA 保持电流Ih最大值:300mA 栅极触发电压-Vgt:2.5V 栅极触发电流-Igt:350mA 包装方式:Tray 电流额定值:1.3A 工作温度:-40°C ~ 125°C
    通用晶闸管 T2160N22TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2200.0 VDRM/ VRRM (V):2200.0 V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2400/85 rT [mΩ] (@Tvj max) max:0.154 Tvj [°C] max:125.0 ITSM:40000.0A VT0 [V] (@Tvj max) max:1.05 ∫I2dt [A²s · 103] (@10ms, Tvj max):8000.0 RthJC [K/kW] (@180° el sin) max:8.5 Clamping force [kn] min max:42.0 95.0 ITAVM:2400 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.65/8.8 ITSM [A] (@10ms, Tvj max):40000.0 tq [µs]:400.0

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