IC普拉斯 元器件现货
全国服务热线： 13172425630
您的当前位置：首页
> Vishay(威世)
| 产品 | 型号 | 品牌 | 参数 |
| 未分类 | CWR11CH225MDC | Vishay(威世) | |
| Screw Terminal铝电解电容 | MAL210436332E3 | Vishay(威世) | 偏差:±20% 电压:400V 容值:3.3mF |
| 未分类 | CWR11CH107JCB | Vishay(威世) | |
| 径向 | BFC233821154 | Vishay(威世) | 偏差:±20% 容值:150nF |
| 未分类 | WSC2515R6000FTA | Vishay(威世) | |
| 抗硫化电阻 | P0805Y4532BBT | Vishay(威世) | |
| 未分类 | CSC10A03101GEK | Vishay(威世) | |
| 军规薄膜电阻-SMD | D55342E07B499ERT1 | Vishay(威世) | 功率:1/4W 偏差:±1% 电阻:499K Ohms 封装/外壳:1206 |
| 军规电阻 | RLR07C1402FSRSL | Vishay(威世) | 功率:1/4W 偏差:±1% 电阻:14K Ohms |
| 军规薄膜电阻-SMD | M55342K12B47B5RWS | Vishay(威世) | 功率:1/10W 偏差:±0.1% 电阻:47.5K Ohms 封装/外壳:0603 |
| 薄膜电阻 | PHP00805H1930BST1 | Vishay(威世) | 功率:5/8W 偏差:±0.1% 电阻:193 Ohms 封装/外壳:0805 |
| 金属膜电阻 | CMF201M0000GNEB | Vishay(威世) | 功率:1W 偏差:±2% 电阻:1M Ohms |
| 薄膜电阻 | TNPW1210200RBEEN | Vishay(威世) | 功率:1/2W 偏差:±0.1% 电阻:200 Ohms 封装/外壳:1210 |
| 军规电阻 | RNC50H25R5BSRSL | Vishay(威世) | 功率:1/10W 偏差:±0.1% 电阻:25.5 Ohms |
| 厚膜电阻 | CRCW060356K0JNEAHP | Vishay(威世) | 功率:1/3W 偏差:±5% 电阻:56K Ohms 封装/外壳:0603 |
| 军规电阻 | RNC55H14R0FSBSL | Vishay(威世) | 功率:1/8W 偏差:±1% 电阻:14 Ohms |
| 稳压(齐纳)二极管 | BZX384B20-HE3-18 | Vishay(威世) | 反向漏电流Ir:50nA @ 14V 封装/外壳:SOD-323 功率:200mW 容差:±2% 工作温度:-55℃~150℃ 齐纳电压Vz:20V 齐纳阻抗Zzt:55 Ohms |
| 薄膜电阻 | MRS25000C1158FRP00 | Vishay(威世) | 功率:3/5W 偏差:±1% 电阻:1.15 Ohms |
| 军规电阻 | RNC50J4933BSRSL | Vishay(威世) | 功率:1/10W 偏差:±0.1% 电阻:493K Ohms |
| 稳压(齐纳)二极管 | MMSZ5240B-E3-08 | Vishay(威世) | 反向漏电流Ir:3uA @ 8V 封装/外壳:SOD-123 功率:500mW 容差:±5% 工作温度:-55℃~150℃ 齐纳电压Vz:10V 齐纳阻抗Zzt:17 Ohms |
| 车规薄膜电阻-SMD | TNPW2512215KBETG | Vishay(威世) | 电阻:215K Ohms 偏差:±0.1% 功率:1/2W 封装/外壳:2512 封装/外壳:2512 封装/外壳:6.30mm x 3.10mm |
| 径向 | BFC237344185 | Vishay(威世) | 偏差:±5% 容值:1.8uF |
| 军规薄膜电阻-SMD | D55342E07B14B2RWS | Vishay(威世) | 功率:1/4W 偏差:±0.1% 电阻:14.2K Ohms 封装/外壳:1206 |
| 军规薄膜电阻-SMD | D55342H07B3E01RWS | Vishay(威世) | 功率:1/4W 偏差:±1% 电阻:3.01K Ohms 封装/外壳:1206 |
| 径向 | HSZ472MAQCRUKR | Vishay(威世) | 偏差:±20% 电压:500V 容值:4.7nF 温度系数(材质):Y5T |
| 金属膜电阻 | CMF5554K900BER6 | Vishay(威世) | 功率:1/2W 偏差:±0.1% 电阻:54.9K Ohms |
| 径向 | D222Z20Z5UH6TJ5R | Vishay(威世) | 偏差:-20%,+80% 电压:100V 容值:2.2nF 温度系数(材质):Z5U |
| 军规电阻 | RNR60H1963FSB14 | Vishay(威世) | 功率:1/4W 偏差:±1% 电阻:196K Ohms |
| 军规电阻 | RNC50H6571DSB14 | Vishay(威世) | 功率:1/10W 偏差:±0.5% 电阻:6.57K Ohms |
| 轴向插件钽电容 | M39003/01-5643/TR | Vishay(威世) | 偏差:±5% 电压:35V 容值:5.6uF |
| 军规电阻 | RNR55J2492BSBSL | Vishay(威世) | 功率:1/8W 偏差:±0.1% 电阻:24.9K Ohms |
| 军规电阻 | RN55E2213DRSL | Vishay(威世) | 功率:1/8W 偏差:±0.5% 电阻:221K Ohms |
| 径向 | 564R30GAD10KA | Vishay(威世) | 偏差:±20% 电压:3KV 容值:1nF 温度系数(材质):Z5U |
| 薄膜电阻 | TNPW121038K3BEEN | Vishay(威世) | 功率:1/2W 偏差:±0.1% 电阻:38.3K Ohms 封装/外壳:1210 |
| 军规电阻 | RNC50H1053FSRE6 | Vishay(威世) | 功率:1/10W 偏差:±1% 电阻:105K Ohms |
| 通用MLCC | VJ0805D221FLAAJ | Vishay(威世) | 偏差:±1% 封装/外壳:0805 电压:50V 容值:220pF 温度系数(材质):C0G(NP0) |
| 金属膜电阻 | MBB02070D2261DC100 | Vishay(威世) | 功率:3/5W 偏差:±0.5% 电阻:2.26K Ohms |
| 肖特基(SBD)二极管 | V20M120M-E3/4W | Vishay(威世) | 反向漏电流Ir:500uA @ 120V 反向电压Vr:120V 封装/外壳:TO-220-3 正向电压Vf:1.01V @ 10A |
| 军规电阻 | RLR07C2613FRRSL | Vishay(威世) | 功率:1/4W 偏差:±1% 电阻:261K Ohms |
| 军规电阻 | RNC55J2261BSBSL | Vishay(威世) | 功率:1/8W 偏差:±0.1% 电阻:2.26K Ohms |
| 固体SMD(MnO2) | CWR26MK106JCHZPR | Vishay(威世) | 偏差:±5% 封装/外壳:2915 电压:35V 容值:10uF |
| 军规电阻 | RNC55J1434FSRE6 | Vishay(威世) | 功率:1/8W 偏差:±1% 电阻:1.43M Ohms |
| 军规电阻 | RNC60H3013BSB14 | Vishay(威世) | 功率:1/4W 偏差:±0.1% 电阻:301K Ohms |
| 金属膜电阻 | MBB02070D6812DC100 | Vishay(威世) | 功率:3/5W 偏差:±0.5% 电阻:68.1K Ohms |
| 军规电阻 | RWR89S3R09DRRSL | Vishay(威世) | 功率:3W 偏差:±0.5% 电阻:3.09 Ohms |
| 金属膜电阻 | SFR2500003909JR500 | Vishay(威世) | 功率:2/5W 偏差:±5% 电阻:39 Ohms |
| 金属膜电阻 | SFR2500002200JR500 | Vishay(威世) | 功率:2/5W 偏差:±5% 电阻:220 Ohms |
| 绕线电阻 | CW0102R000KE12 | Vishay(威世) | 功率:13W 偏差:±10% 电阻:2 Ohms |
| 薄膜电阻 | MRS16000C3019FCT00 | Vishay(威世) | 功率:2/5W 偏差:±1% 电阻:30.1 Ohms |
| 军规电阻 | RWR80SR499BRB12 | Vishay(威世) | 功率:2W 偏差:±0.1% 电阻:499m Ohms |
| 军规电阻 | RWR81N1R82FRB12 | Vishay(威世) | 功率:1W 偏差:±1% 电阻:1.82 Ohms |
| 军规薄膜电阻-SMD | D55342E07B78E7RT1 | Vishay(威世) | 功率:1/4W 偏差:±1% 电阻:78.7K Ohms 封装/外壳:1206 |
| 轴向插件钽电容 | M39003/01-6216H | Vishay(威世) | 偏差:±5% 电压:50V 容值:5.6uF |
| 军规电阻 | RWR84N6041FRBSL | Vishay(威世) | 功率:7W 偏差:±1% 电阻:6.04K Ohms |
| 金属膜电阻 | CMF55402K00DHEA | Vishay(威世) | 功率:1/2W 偏差:±0.5% 电阻:402K Ohms |
| 厚膜电阻 | CRCW120636R0FKEB | Vishay(威世) | 功率:1/4W 偏差:±1% 电阻:36 Ohms 封装/外壳:1206 |
| 军规薄膜电阻-SMD | D55342H07B274DRT1 | Vishay(威世) | 功率:1/4W 偏差:±1% 电阻:274 Ohms 封装/外壳:1206 |
| 厚膜电阻 | CRCW1206115KFKEC | Vishay(威世) | 功率:1/4W 偏差:±1% 电阻:115K Ohms 封装/外壳:1206 |
| 固体SMD(MnO2) | T95Z226M016ESAL | Vishay(威世) | 偏差:±20% 封装/外壳:2910 电压:16V 容值:22uF |
| 军规电阻 | RNC55H7900BSRE6 | Vishay(威世) | 功率:1/8W 偏差:±0.1% 电阻:790 Ohms |
| 军规电阻 | RN55E1621BR36 | Vishay(威世) | 功率:1/8W 偏差:±0.1% 电阻:1.62K Ohms |
| 逻辑输出光耦 | SFH6719 | Vishay(威世) | 上升/下降时间(典型值):40ns,10ns 传播延迟tpLH/tpHL(最大值):300ns,300ns 共模瞬变抗扰度(最小值):2.5kV/us 封装/外壳:8-DIP(0.300"",7.62mm) 工作温度:-40°C ~ 85°C 数据速率:5MBd 电压-供电:4.5V ~ 15V 电压-正向(Vf)(典型值):1.6V 电压-隔离:5300Vrms 电流-DC正向(If)(最大值):10mA 电流-输出/通道:25mA 输入-侧1/侧2:1/0 输入类型:DC 输出类型:三态 通道数:1 |
| 军规电阻 | RWR84S6811FRRSL | Vishay(威世) | 功率:7W 偏差:±1% 电阻:6.81K Ohms |
| 金属膜电阻 | CMF55104K00DHEB | Vishay(威世) | 功率:1/2W 偏差:±0.5% 电阻:104K Ohms |
| 固体SMD(MnO2) | CWR26KC106JCGAPR | Vishay(威世) | 偏差:±5% 封装/外壳:2711 电压:25V 容值:10uF |
| 径向 | K220K15C0GH5TH5 | Vishay(威世) | 偏差:±10% 电压:100V 容值:22pF 温度系数(材质):C0G(NP0) |
| 绕线电阻 | CW010R5600JE123 | Vishay(威世) | 功率:13W 偏差:±5% 电阻:560m Ohms |
| 底座安装型电阻 | RER75FR845PCSL | Vishay(威世) | 功率:30W 偏差:±1% 电阻:845m Ohms |
| 军规电阻 | RWR89SR133FRB12 | Vishay(威世) | 功率:3W 偏差:±1% 电阻:133m Ohms |
| 固体SMD(MnO2) | T95D477M6R3CSAL | Vishay(威世) | 偏差:±20% 封装/外壳:2917 电压:6.3V 容值:470uF |
| 通用MLCC | CDR31BP330BJZSAT | Vishay(威世) | 偏差:±5% 封装/外壳:0805 电压:100V 容值:33pF 温度系数(材质):BP |
| 金属膜电阻 | CMF55117K00BEBF | Vishay(威世) | 功率:1/2W 偏差:±0.1% 电阻:117K Ohms |
| 径向 | K562M10X7RF5UL2 | Vishay(威世) | 偏差:±20% 电压:50V 容值:5.6nF 温度系数(材质):X7R |
| 径向 | S102K39X7RP6VK5R | Vishay(威世) | 偏差:±10% 电压:2KV 容值:1nF 温度系数(材质):X7R |
| 金属膜电阻 | CMF50600K00FKEB | Vishay(威世) | 功率:1/4W 偏差:±1% 电阻:600K Ohms |
| 金属膜电阻 | CMF6082K000FKEA | Vishay(威世) | 功率:1W 偏差:±1% 电阻:82K Ohms |
| 金属膜电阻 | CMF5569R000DHEK | Vishay(威世) | 功率:1/2W 偏差:±0.5% 电阻:69 Ohms |
| 军规电阻 | RWR81S18R7FSB12 | Vishay(威世) | 功率:1W 偏差:±1% 电阻:18.7 Ohms |
| 固体SMD(MnO2) | CWR26HK106JBFBPR | Vishay(威世) | 偏差:±5% 封装/外壳:2214 电压:15V 容值:10uF |
| 通用MLCC | VJ0805D680FLPAJ | Vishay(威世) | 偏差:±1% 封装/外壳:0805 电压:250V 容值:68pF 温度系数(材质):C0G(NP0) |
| 通用MLCC | VJ0805D221JXBAJ | Vishay(威世) | 偏差:±5% 封装/外壳:0805 电压:100V 容值:220pF 温度系数(材质):C0G(NP0) |
| 车规薄膜电阻-SMD | TNPW20102K37BETF | Vishay(威世) | 电阻:2.37K Ohms 偏差:±0.1% 功率:2/5W 封装/外壳:2010 封装/外壳:2010 封装/外壳:5.00mm x 2.50mm |
| 薄膜电阻 | TNPW080532K4FHTA | Vishay(威世) | 功率:1/8W 偏差:±1% 电阻:32.4K Ohms 封装/外壳:0805 |
| 固体SMD(MnO2) | T95Y686M004EZSL | Vishay(威世) | 偏差:±20% 封装/外壳:2910 电压:4V 容值:68uF |
| 薄膜电阻 | TNPW1206147RBYEA | Vishay(威世) | 功率:2/5W 偏差:±0.1% 电阻:147 Ohms 封装/外壳:1206 |
| 军规电阻 | RNC55J1870FSB14 | Vishay(威世) | 功率:1/8W 偏差:±1% 电阻:187 Ohms |
| 军规电阻 | RWR80S1050FRRSL | Vishay(威世) | 功率:2W 偏差:±1% 电阻:105 Ohms |
| 军规电阻 | RWR89S1471FRRSL | Vishay(威世) | 功率:3W 偏差:±1% 电阻:1.47K Ohms |
| 军规电阻 | RNC55H1623FMRSL | Vishay(威世) | 功率:1/8W 偏差:±1% 电阻:162K Ohms |
| 军规电阻 | RLR07C11R0FRR36 | Vishay(威世) | 功率:1/4W 偏差:±1% 电阻:11 Ohms |
| 插件厚膜排阻 | MSP08A03270RGEJ | Vishay(威世) | 偏差:±2% 电阻:270 Ohms 封装/外壳:8-SIP |
| 通用MLCC | VJ0805D8R2BXAAC | Vishay(威世) | 偏差:±0.1pF 封装/外壳:0805 电压:50V 容值:8.2pF 温度系数(材质):C0G(NP0) |
| 军规电阻 | RNC55H7322BSRSL | Vishay(威世) | 功率:1/8W 偏差:±0.1% 电阻:73.2K Ohms |
| 金属膜电阻 | CMF559K5300FHEK | Vishay(威世) | 功率:1/2W 偏差:±1% 电阻:9.53K Ohms |
| 军规电阻 | RWR81S2R74FSBSL | Vishay(威世) | 功率:1W 偏差:±1% 电阻:2.74 Ohms |
| 径向 | K470K15C0GF53L2 | Vishay(威世) | 偏差:±10% 电压:50V 容值:47pF 温度系数(材质):C0G(NP0) |
| 通用MOSFET | SI4409DY-T1-GE3 | Vishay(威世) | 连续漏极电流Id:1.3A(Tc) FET类型:P-Channel Vgs(最大值):±20V Rds On(Max)@Id,Vgs:1.2 Ohms @ 500mA,10V Vgs(th):4V @ 250uA Pd-功率耗散(Max):2.2W(Ta),4.6W(Tc) 封装/外壳:8-SOIC 工作温度:-55℃~150℃ 漏源极电压Vds:150V |
| 军规电阻 | RNC55H2551BRBSL | Vishay(威世) | 功率:1/8W 偏差:±0.1% 电阻:2.55K Ohms |
| 军规电阻 | RNC55J45R3BSBSL | Vishay(威世) | 功率:1/8W 偏差:±0.1% 电阻:45.3 Ohms |
| 军规电阻 | RWR89S61R9FSS70 | Vishay(威世) | 功率:3W 偏差:±1% 电阻:61.9 Ohms |