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    产品 型号 品牌 参数
    通用晶闸管 TZ430N20KOF SCR 数，二极管:1 SCR 电压 - 断态:2KV 电流 - 通态（It（AV））（最大值）:669A 电流 - 通态（It（RMS））（最大值）:1050A 电压 - 栅极触发（Vgt）（最大值）:2.2V 电流 - 栅极触发（Igt）（最大值）:250mA 电流 - 不重复浪涌 50，60Hz（Itsm）:14000A @ 50Hz 电流 - 保持（Ih）（最大值）:300mA 工作温度:-40°C ~ 125°C 封装/外壳:BG-PB501-1
    通用晶闸管 VS-40TPS12-M3 电压 - 断态:1.2KV 电压 - 栅极触发（Vgt）（最大值）:2.5V 电流 - 栅极触发（Igt）（最大值）:150mA 电压 - 通态（Vtm）（最大值）:1.85V 电流 - 通态（It（AV））（最大值）:35A 电流 - 通态（It（RMS））（最大值）:55A 电流 - 保持（Ih）（最大值）:200mA 电流 - 断态（最大值）:500µA 电流 - 不重复浪涌 50，60Hz（Itsm）:500A @ 50Hz SCR 类型:标准恢复型 工作温度:-40°C ~ 125°C 封装/外壳:TO-247AC
    通用晶闸管 VS-70TPS16PBF 电压 - 断态:1.6KV 电压 - 栅极触发（Vgt）（最大值）:1.5V 电流 - 栅极触发（Igt）（最大值）:100mA 电压 - 通态（Vtm）（最大值）:1.4V 电流 - 通态（It（AV））（最大值）:70A 电流 - 通态（It（RMS））（最大值）:75A 电流 - 保持（Ih）（最大值）:200mA 电流 - 断态（最大值）:1mA 电流 - 不重复浪涌 50，60Hz（Itsm）:1400A @ 50Hz SCR 类型:标准恢复型 工作温度:-40°C ~ 125°C 封装/外壳:SUPER-247(TO-274AA) 基本零件编号:70TPS*
    通用晶闸管 VS-40TPS12A-M3 电压 - 断态:1.2KV 电压 - 栅极触发（Vgt）（最大值）:2.5V 电流 - 栅极触发（Igt）（最大值）:150mA 电压 - 通态（Vtm）（最大值）:1.85V 电流 - 通态（It（AV））（最大值）:35A 电流 - 通态（It（RMS））（最大值）:55A 电流 - 保持（Ih）（最大值）:200mA 电流 - 断态（最大值）:500µA 电流 - 不重复浪涌 50，60Hz（Itsm）:500A @ 50Hz SCR 类型:标准恢复型 工作温度:-40°C ~ 125°C 封装/外壳:TO-247AC
    通用晶闸管 VS-40TPS12-M3 电压 - 断态:1.2KV 电压 - 栅极触发（Vgt）（最大值）:2.5V 电流 - 栅极触发（Igt）（最大值）:150mA 电压 - 通态（Vtm）（最大值）:1.85V 电流 - 通态（It（AV））（最大值）:35A 电流 - 通态（It（RMS））（最大值）:55A 电流 - 保持（Ih）（最大值）:200mA 电流 - 断态（最大值）:500µA 电流 - 不重复浪涌 50，60Hz（Itsm）:500A @ 50Hz SCR 类型:标准恢复型 工作温度:-40°C ~ 125°C 封装/外壳:TO-247AC
    通用晶闸管 VS-30TPS12PBF 系列:VS FET类型:SCRs 零件号别名:30TPS12PBF 电流额定值:20 A Vf-正向电压:1.3 V 栅极触发电流-Igt:45 mA 电压-断态:1200V 电压-栅极触发（Vgt）（最大值）:2V 电流-栅极触发（Igt）（最大值）:45mA 电压-通态（Vtm）（最大值）:1.3V 电流-通态（It（AV））（最大值）:20A 电流-通态（It（RMS））（最大值）:30A 电流-保持（Ih）（最大值）:100mA 电流-断态（最大值）:500µA 电流-不重复浪涌50，60Hz（Itsm）:300A @ 50Hz SCR类型:标准恢复型 工作温度:-40°C ~ 125°C 封装/外壳:TO-247AC
    通用晶闸管 TT92N16KOF FET类型:RectifierDiodeModule Vr - 反向电压:1600V 系列:TT92N 配置:1-PhaseController-AllSCRs 输出电流:160A 栅极触发电流-Igt:120mA 保持电流Ih最大值:200mA 典型延迟时间:3us 工作温度:-40°C ~ 130°C
    通用晶闸管 TT92N12KOF FET类型:RectifierDiodeModule Vr - 反向电压:1200V 系列:TT92N 配置:1-PhaseController-AllSCRs 输出电流:160A 栅极触发电流-Igt:120mA 保持电流Ih最大值:200mA 典型延迟时间:3us 工作温度:-40°C ~ 130°C
    通用晶闸管 TT330N16KOF FET类型:PhaseControl Vr - 反向电压:1600V 系列:TT330N 配置:1-PhaseController-AllSCRs 输出电流:520A 栅极触发电流-Igt:200mA 保持电流Ih最大值:300mA 典型延迟时间:3us 工作温度:-40°C ~ 125°C
    通用晶闸管 TT320N18SOF Moisture Level:NA Configuration:SCR / SCR Phase Control VDRM / VRRM [V]:1800.0 IFSM / ITSM [A] (@10ms, Tvj max):8200.0 VDRM/ VRRM (V):1800.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):100.0 Housing:Eco Block 50 mm rT [mΩ] (@Tvj max) max:0.58 Tvj [°C] max:130.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):320/85 VT0 [V] (@Tvj max) max:0.77 ∫I2dt [A²s · 103] (@10ms, Tvj max):335.0 RthJC [K/W] (@180° el sin) max:0.055
    通用晶闸管 TT280N18SOF Moisture Level:NA Configuration:SCR / SCR Phase Control VDRM / VRRM [V]:1800.0 IFSM / ITSM [A] (@10ms, Tvj max):7800.0 VDRM/ VRRM (V):1800.0 V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):100.0 Housing:Eco Block 50 mm rT [mΩ] (@Tvj max) max:0.82 Tvj [°C] max:130.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):280/85 VT0 [V] (@Tvj max) max:1.77 ∫I2dt [A²s · 103] (@10ms, Tvj max):304.2 RthJC [K/W] (@180° el sin) max:0.11
    通用晶闸管 TT251N12KOFHPSA1 SCR 数，二极管:2 SCRs 电压 - 断态:1.2KV 电流 - 通态（It（AV））（最大值）:250A 电压 - 栅极触发（Vgt）（最大值）:2V 电流 - 栅极触发（Igt）（最大值）:200mA 电流 - 不重复浪涌 50，60Hz（Itsm）:9100A @ 50Hz 电流 - 保持（Ih）（最大值）:300mA 工作温度:-40°C ~ 125°C 封装/外壳:BG-PB50-1 闸流晶体管类型:PCT 最大栅极触发电压:2V 最大栅极触发电流:200mA 最大保持电流:300mA 额定平均通态电流:250A 重复峰值反向电压:1200V 浪涌电流额定值:9100A 封装/外壳:模块 50mm 引脚数目:7 峰值通态电压:1.4V 重复峰值正向阻断电压:1800V 重复峰值断态电流:50mA 封装/外壳:92 x 50 x 52mm 最低工作温度:-40 °C 高度:52mm 宽度:50mm 长度:92mm 最高工作温度:+125 °C
    通用晶闸管 TT190N18SOF Moisture Level:NA Configuration:SCR / SCR Phase Control VDRM / VRRM [V]:1800.0 IFSM / ITSM [A] (@10ms, Tvj max):4500.0 VDRM/ VRRM (V):1800.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):100.0 Housing:Power Block 34 mm rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):190/85 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.3 RthJC [K/W] (@180° el sin) max:0.165
    通用晶闸管 TT160N18SOF Moisture Level:NA Configuration:SCR / SCR Phase Control VDRM / VRRM [V]:1800.0 IFSM / ITSM [A] (@10ms, Tvj max):4500.0 VDRM/ VRRM (V):1800.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):100.0 Housing:Eco Block 34 mm rT [mΩ] (@Tvj max) max:0.99 Tvj [°C] max:125.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):160/85 VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.3 RthJC [K/W] (@180° el sin) max:0.165
    通用晶闸管 TD320N18SOF Moisture Level:NA Configuration:SCR / Diode Phase Control VDRM / VRRM [V]:1800.0 IFSM / ITSM [A] (@10ms, Tvj max):8200.0 VDRM/ VRRM (V):1800.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):100.0 Housing:Power Block 50 mm rT [mΩ] (@Tvj max) max:0.58 Tvj [°C] max:130.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):320/85 VT0 [V] (@Tvj max) max:0.77 ∫I2dt [A²s · 103] (@10ms, Tvj max):335.0 RthJC [K/W] (@180° el sin) max:0.11
    通用晶闸管 TD280N18SOF Moisture Level:NA Configuration:SCR / SCR Phase Control VDRM / VRRM [V]:1800.0 IFSM / ITSM [A] (@10ms, Tvj max):7800.0 VDRM/ VRRM (V):1800.0 V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):100.0 Housing:Eco Block 50 mm rT [mΩ] (@Tvj max) max:0.82 Tvj [°C] max:130.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):280/85 VT0 [V] (@Tvj max) max:1.77 ∫I2dt [A²s · 103] (@10ms, Tvj max):304.2 RthJC [K/W] (@180° el sin) max:0.11
    通用晶闸管 TD190N18SOF Moisture Level:NA Configuration:SCR / SCR Phase Control VDRM / VRRM [V]:1800.0 IFSM / ITSM [A] (@10ms, Tvj max):4500.0 VDRM/ VRRM (V):1800.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):100.0 Housing:Power Block 34 mm rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):190/85 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.3 RthJC [K/W] (@180° el sin) max:0.165
    通用晶闸管 TD160N18SOF Moisture Level:NA Configuration:SCR / SCR Phase Control VDRM / VRRM [V]:1800.0 IFSM / ITSM [A] (@10ms, Tvj max):4500.0 VDRM/ VRRM (V):1800.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):100.0 Housing:Eco Block 34 mm rT [mΩ] (@Tvj max) max:0.99 Tvj [°C] max:125.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):160/85 VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.3 RthJC [K/W] (@180° el sin) max:0.165
    通用晶闸管 T430N12TOFXPSA1 SCR 数，二极管:1 SCR 电压 - 断态:1.8KV 电流 - 通态（It（AV））（最大值）:433A 电流 - 通态（It（RMS））（最大值）:700A 电压 - 栅极触发（Vgt）（最大值）:2V 电流 - 栅极触发（Igt）（最大值）:200mA 电流 - 不重复浪涌 50，60Hz（Itsm）:5200A @ 50Hz 电流 - 保持（Ih）（最大值）:300mA 工作温度:-40°C ~ 125°C 封装/外壳:BG-T4214K0-1 额定平均通态电流:433A 闸流晶体管类型:PCT 封装/外壳:BG-T4214K0-1 重复峰值反向电压:1200V 浪涌电流额定值:5200A 安装类型:螺柱 最大栅极触发电流:200mA 最大栅极触发电压:2V 最大保持电流:300mA 引脚数目:5 高度:14.5mm 封装/外壳:42 (Dia.) x 14.5 (Height)mm 峰值通态电压:2.07V 最低工作温度:-40 °C 最高工作温度:+125 °C 重复峰值正向阻断电压:1800V 直径:42mm 重复峰值断态电流:50mA
    通用晶闸管 DT250N16KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:1600V 输出电流:410A RoHS compliant:yes Moisture Level:NA Configuration:Diode / SCR Phase Control VDRM / VRRM [V]:1600.0 IFSM / ITSM [A] (@10ms, Tvj max):7000.0 VDRM/ VRRM (V):1600.0 V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0 Housing:Power Block 50 mm rT [mΩ] (@Tvj max) max:0.7 Tvj [°C] max:125.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):250/85 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):245.0 RthJC [K/W] (@180° el sin) max:0.13 RthJC [K/W] (@180° el sin) max:0.13 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):250/85 IFSM / ITSM:7000.0A IFAVM / TC / ITAVM / TC:250/85 (180° el sin) A/°C rT [mΩ] (@Tvj max) max:0.7 Tvj [°C] max:125.0 IFSM / ITSM [A] (@10ms, Tvj max):7000.0 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):245.0 (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0
    通用晶闸管 TD104N12KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:1200V 系列:TT104N 输出电流:160A RoHS compliant:yes Moisture Level:NA Configuration:SCR / Diode Phase Control VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0 Housing:PowerBLOCK 20 mm rT [mΩ] (@Tvj max) max:2.15 Tvj [°C] max:140.0 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):16.2 RthJC [K/W] (@180° el sin) max:0.37 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):104/85 IFSM / ITSM:1800.0A IFAVM / TC / ITAVM / TC:104/85 (180° el sin) A/°C IFSM / ITSM [A] (@10ms, Tvj max):1800.0
    通用晶闸管 TT215N18KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:1800V 输出电流:410A RoHS compliant:yes Moisture Level:NA Configuration:SCR / SCR Phase Control VDRM / VRRM [V]:1800.0 VDRM/ VRRM (V):1800.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):100.0 Housing:PowerBLOCK 50 mm rT [mΩ] (@Tvj max) max:0.92 Tvj [°C] max:125.0 VT0 [V] (@Tvj max) max:0.95 ∫I2dt [A²s · 103] (@10ms, Tvj max):198.0 RthJC [K/W] (@180° el sin) max:0.13 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):215/85 IFSM / ITSM:6300.0A IFAVM / TC / ITAVM / TC:215/85 (180° el sin) A/°C IFSM / ITSM [A] (@10ms, Tvj max):6300.0
    通用晶闸管 TD92N12KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:1200V 输出电流:160A RoHS compliant:yes Moisture Level:NA Configuration:SCR / Diode Phase Control VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0 Housing:PowerBLOCK 20 mm rT [mΩ] (@Tvj max) max:2.15 Tvj [°C] max:130.0 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):16.2 RthJC [K/W] (@180° el sin) max:0.37 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):92/85 IFSM / ITSM:1800.0A IFAVM / TC / ITAVM / TC:92/85 (180° el sin) A/°C IFSM / ITSM [A] (@10ms, Tvj max):1800.0
    通用晶闸管 TD210N16KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:1600V 输出电流:410A 典型延迟时间:3uS RoHS compliant:yes Moisture Level:NA Configuration:SCR / Diode Phase Control VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0 Housing:PowerBLOCK 50 mm rT [mΩ] (@Tvj max) max:1.0 Tvj [°C] max:125.0 VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):168.0 RthJC [K/W] (@180° el sin) max:0.13 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):210/85 IFSM / ITSM:5800.0A IFAVM / TC / ITAVM / TC:210/85 (180° el sin) A/°C IFSM / ITSM [A] (@10ms, Tvj max):5800.0
    通用晶闸管 TZ530N32KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:3200V 输出电流:1500A 栅极触发电流-Igt:250mA 典型延迟时间:4uS
    通用晶闸管 TZ800N18KOFn: 0 FET类型:Rectifier Diode Module 输出电流:1500 A 反向电压Vr:1800 V 标准包装数量:50 RoHS compliant:yes Moisture Level:NA Configuration:Single SCR Phase Control VDRM / VRRM [V]:1800.0 IFSM / ITSM [A] (@10ms, Tvj max):30000.0 VDRM/ VRRM (V):1800.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):200.0 Housing:PowerBLOCK 70 mm rT [mΩ] (@Tvj max) max:0.17 Tvj [°C] max:125.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):800/85 VT0 [V] (@Tvj max) max:0.82 ∫I2dt [A²s · 103] (@10ms, Tvj max):4500.0 RthJC [K/W] (@180° el sin) max:0.042 RthJC [K/W] (@180° el sin) max:0.042 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):800/85 IFSM / ITSM:30000.0A IFAVM / TC / ITAVM / TC:800/85 (180° el sin) A/°C rT [mΩ] (@Tvj max) max:0.17 Tvj [°C] max:125.0 IFSM / ITSM [A] (@10ms, Tvj max):30000.0 VT0 [V] (@Tvj max) max:0.82 ∫I2dt [A²s · 103] (@10ms, Tvj max):4500.0 (diT/dt)cr [A/µs] (@DIN IEC 747- 6):200.0
    通用晶闸管 TZ500N14KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:1400V 输出电流:1050A 典型延迟时间:4uS RoHS compliant:yes Moisture Level:NA Configuration:Single SCR Phase Control VDRM / VRRM [V]:1400.0 IFSM / ITSM [A] (@10ms, Tvj max):14500.0 VDRM/ VRRM (V):1400.0 V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):200.0 Housing:PowerBLOCK 50 mm rT [mΩ] (@Tvj max) max:0.27 Tvj [°C] max:125.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):500/85 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):1051.0 RthJC [K/W] (@180° el sin) max:0.065 RthJC [K/W] (@180° el sin) max:0.065 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):500/85 IFSM / ITSM:14500.0A IFAVM / TC / ITAVM / TC:500/85 (180° el sin) A/°C rT [mΩ] (@Tvj max) max:0.27 Tvj [°C] max:125.0 IFSM / ITSM [A] (@10ms, Tvj max):14500.0 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):1051.0 (diT/dt)cr [A/µs] (@DIN IEC 747- 6):200.0
    通用晶闸管 TT285N16KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:1600V 输出电流:450A 典型延迟时间:3uS RoHS compliant:yes Moisture Level:NA Configuration:SCR / SCR Phase Control VDRM / VRRM [V]:1600.0 IFSM / ITSM [A] (@10ms, Tvj max):10000.0 VDRM/ VRRM (V):1600.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):250.0 Housing:Power Block 50 mm rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:130.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):285/92 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):781.0 RthJC [K/W] (@180° el sin) max:0.112 RthJC [K/W] (@180° el sin) max:0.112 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):285/92 IFSM / ITSM:8000.0A IFAVM / TC / ITAVM / TC:285/92 (180° el sin) A/°C rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:130.0 IFSM / ITSM [A] (@10ms, Tvj max):8000.0 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):781.0 (diT/dt)cr [A/µs] (@DIN IEC 747- 6):250.0
    通用晶闸管 TD285N16KOFn: 0 RoHS compliant:yes Moisture Level:NA Configuration:SCR / Diode Phase Control VDRM / VRRM [V]:1600.0 IFSM / ITSM [A] (@10ms, Tvj max):10000.0 VDRM/ VRRM (V):1600.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):250.0 Housing:PowerBLOCK 50 mm rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:130.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):285/92 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):500.0 RthJC [K/W] (@180° el sin) max:0.056 RthJC [K/W] (@180° el sin) max:0.056 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):285/92 IFSM / ITSM:8000.0A IFAVM / TC / ITAVM / TC:285/92 (180° el sin) A/°C rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:130.0 IFSM / ITSM [A] (@10ms, Tvj max):8000.0 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):500.0 (diT/dt)cr [A/µs] (@DIN IEC 747- 6):250.0
    通用晶闸管 TD250N14KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:1400V 输出电流:410A RoHS compliant:yes Moisture Level:NA Configuration:SCR / Diode Phase Control VDRM / VRRM [V]:1400.0 IFSM / ITSM [A] (@10ms, Tvj max):7000.0 VDRM/ VRRM (V):1400.0 V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0 Housing:Power Block 50 mm rT [mΩ] (@Tvj max) max:0.7 Tvj [°C] max:125.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):250/85 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):245.0 RthJC [K/W] (@180° el sin) max:0.13 RthJC [K/W] (@180° el sin) max:0.13 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):250/85 IFSM / ITSM:7000.0A IFAVM / TC / ITAVM / TC:250/85 (180° el sin) A/°C rT [mΩ] (@Tvj max) max:0.7 Tvj [°C] max:125.0 IFSM / ITSM [A] (@10ms, Tvj max):7000.0 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):245.0 (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0
    通用晶闸管 TDB6HK180N16RR_B11 RoHS compliant:yes Moisture Level:NA Configuration:Half Controlled Bridges with Brake Chopper Dimensions (length):107.5mm VDRM/ VRRM (V):1600.0V Housing:EconoBRIDGE™ Dimensions (length):107.5 mm Dimensions (width):45.0 mm Voltage Class:1600.0 V I(FSM) max:1400.0A IRMSM:180.0 A Dimensions (width):45.0mm I(FSM) max:1400.0 A
    通用晶闸管 TDB6HK360N16Pn: RoHS compliant:yes Configuration:Half Controlled Bridges with NTC Dimensions (length):130.0mm VDRM/ VRRM (V):1600.0V Housing:EconoBRIDGE™ Dimensions (length):130.0 mm Dimensions (width):70.6 mm Voltage Class:1600.0 V I(FSM) max:2300.0A IRMSM:360.0 A Dimensions (width):70.6mm I(FSM) max:2300.0 A
    通用晶闸管 DT92N16KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:1600V 系列:TT92N 配置:Bridge,1-Phase 输出电流:160A 栅极触发电流-Igt:120mA 保持电流Ih最大值:200mA 典型延迟时间:3us 工作温度:-40°C ~ 130°C
    通用晶闸管 DT61N16KOFn: 0 FET类型:PhaseControl Vr - 反向电压:1600V 系列:TT61N 配置:Bridge,1-Phase 输出电流:120A 栅极触发电流-Igt:120mA 保持电流Ih最大值:200mA 典型延迟时间:3us 工作温度:-40°C ~ 125°C
    通用晶闸管 DT250N16KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:1600V 输出电流:410A RoHS compliant:yes Moisture Level:NA Configuration:Diode / SCR Phase Control VDRM / VRRM [V]:1600.0 IFSM / ITSM [A] (@10ms, Tvj max):7000.0 VDRM/ VRRM (V):1600.0 V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0 Housing:Power Block 50 mm rT [mΩ] (@Tvj max) max:0.7 Tvj [°C] max:125.0 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):250/85 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):245.0 RthJC [K/W] (@180° el sin) max:0.13 RthJC [K/W] (@180° el sin) max:0.13 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):250/85 IFSM / ITSM:7000.0A IFAVM / TC / ITAVM / TC:250/85 (180° el sin) A/°C rT [mΩ] (@Tvj max) max:0.7 Tvj [°C] max:125.0 IFSM / ITSM [A] (@10ms, Tvj max):7000.0 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):245.0 (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0
    通用晶闸管 DT142N12KOFn: 0 FET类型:RectifierDiodeModule Vr - 反向电压:1200V 输出电流:230A 典型延迟时间:3uS RoHS compliant:yes Moisture Level:NA Configuration:Diode / SCR Phase Control VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0 Housing:Power Block 34 mm rT [mΩ] (@Tvj max) max:1.1 Tvj [°C] max:125.0 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):84.0 RthJC [K/W] (@180° el sin) max:0.22 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):142/85 IFSM / ITSM:4100.0A IFAVM / TC / ITAVM / TC:142/85 (180° el sin) A/°C IFSM / ITSM [A] (@10ms, Tvj max):4100.0
    通用晶闸管 TD162N16KOF Infineon(英飞凌) 系列:TD162N 保持电流Ih最大值:200mA 栅极触发电流-Igt:150mA RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:SCR / Diode Phase Control VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0V (diT/dt)cr [A/µs] (@DIN IEC 747- 6):150.0 Housing:Power Block 34 mm rT [mΩ] (@Tvj max) max:0.95 Tvj [°C] max:125.0 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):97.0 RthJC [K/W] (@180° el sin) max:0.2 IFAVM/TC / ITAVM/TC [A/°C] (@180° el sin):162/85 IFSM / ITSM:4400.0A IFAVM / TC / ITAVM / TC:162/85 (180° el sin) A/°C IFSM / ITSM [A] (@10ms, Tvj max):4400.0
    通用晶闸管 T640N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0 V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):644/85 rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:125.0 ITSM:8000.0A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):320.0 RthJC [K/kW] (@180° el sin) max:39.0 RthJC [K/kW] (@180° el sin) max:39.0 rT [mΩ] (@Tvj max) max:0.5 Clamping force [kn] min max:6.0 12.0 ITAVM:644 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):644/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.15/2.4 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):320.0 ITSM [A] (@10ms, Tvj max):8000.0 VT/IT [V/kA] (@Tvj max):2.15/2.4 Clamping force [kn] min max:6.0 12.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):8000.0
    通用晶闸管 T1851N60TOH Infineon(英飞凌) 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:6000.0 VDRM/ VRRM (V):6000.0V Housing:Disc dia 120mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1830/85 rT [mΩ] (@Tvj max) max:0.49 Tvj [°C] max:125.0 ITSM:48000.0A VT0 [V] (@Tvj max) max:1.22 ∫I2dt [A²s · 103] (@10ms, Tvj max):11500.0 RthJC [K/kW] (@180° el sin) max:6.5 Clamping force [kn] min max:45.0 65.0 ITAVM:1830 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.65/3.0 ITSM [A] (@10ms, Tvj max):48000.0 tq [µs]:600.0
    通用晶闸管 T1930N36TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:3600.0 VDRM/ VRRM (V):3600.0 V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2180/85 rT [mΩ] (@Tvj max) max:0.2 Tvj [°C] max:125.0 ITSM:37000.0 A VT0 [V] (@Tvj max) max:1.08 ∫I2dt [A²s · 103] (@10ms, Tvj max):6850.0 RthJC [K/kW] (@180° el sin) max:8.5 RthJC [K/kW] (@180° el sin) max:8.5 rT [mΩ] (@Tvj max) max:0.2 Clamping force [kn] min max:40.0 65.0 ITAVM:2180 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):2180/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.90/8.0 VT0 [V] (@Tvj max) max:1.08 ∫I2dt [A²s · 103] (@10ms, Tvj max):6850.0 ITSM [A] (@10ms, Tvj max):37000.0 VT/IT [V/kA] (@Tvj max):2.90/8.0 Clamping force [kn] min max:40.0 65.0 tq [µs]:450.0 ITSM [A] (@10ms, Tvj max):37000.0
    通用晶闸管 T1451N52TOH Infineon(英飞凌) 不重复通态电流:44000A 额定重复关闭状态电压 VDRM:5200V 关闭状态漏泄电流（在 VDRM IDRM 下）:400mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:2.3A 工作温度:-40°C ~ 125°C
    通用晶闸管 T880N16TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0V Housing:Disc dia 58mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):879/85 rT [mΩ] (@Tvj max) max:0.27 Tvj [°C] max:125.0 ITSM:15500.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):1200.0 RthJC [K/kW] (@180° el sin) max:32.0 Clamping force [kn] min max:10.5 21.0 ITAVM:879 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.95/3.6 ITSM [A] (@10ms, Tvj max):15500.0 tq [µs]:250.0
    通用晶闸管 T590N16TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0V Housing:Disc dia 58mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):588/85 rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:125.0 ITSM:8000.0A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):320.0 RthJC [K/kW] (@180° el sin) max:45.0 Clamping force [kn] min max:6.0 12.0 ITAVM:588 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.15/2.4 ITSM [A] (@10ms, Tvj max):8000.0 tq [µs]:250.0
    通用晶闸管 T2351N52TOH Infineon(英飞凌) 不重复通态电流:55000A 额定重复关闭状态电压 VDRM:5200V 关闭状态漏泄电流（在 VDRM IDRM 下）:200mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:3.2A 工作温度:-40°C ~ 125°C
    通用晶闸管 T3710N04TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:400.0 VDRM/ VRRM (V):400.0 V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):3710/85 rT [mΩ] (@Tvj max) max:0.048 Tvj [°C] max:140.0 ITSM:60000.0A VT0 [V] (@Tvj max) max:0.75 ∫I2dt [A²s · 103] (@10ms, Tvj max):18000.0 RthJC [K/kW] (@180° el sin) max:12.5 Clamping force [kn] min max:30.0 65.0 ITAVM:3710 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.50/15.0 ITSM [A] (@10ms, Tvj max):60000.0 tq [µs]:200.0
    通用晶闸管 T830N14TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0V Housing:Disc dia 58mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):844/85 rT [mΩ] (@Tvj max) max:0.3 Tvj [°C] max:125.0 ITSM:12500.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):781.0 RthJC [K/kW] (@180° el sin) max:30.0 Clamping force [kn] min max:9.0 18.0 ITAVM:826 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.94/3.0 ITSM [A] (@10ms, Tvj max):12500.0 tq [µs]:250.0
    通用晶闸管 T560N16TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):559/85 rT [mΩ] (@Tvj max) max:0.6 Tvj [°C] max:125.0 ITSM:6900.0 A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 RthJC [K/kW] (@180° el sin) max:44.0 RthJC [K/kW] (@180° el sin) max:44.0 rT [mΩ] (@Tvj max) max:0.6 Clamping force [kn] min max:5.0 10.0 ITAVM:595 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):559/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 ITSM [A] (@10ms, Tvj max):6900.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 Clamping force [kn] min max:5.0 10.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):6900.0
    通用晶闸管 T3710N02TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:200.0 VDRM/ VRRM (V):200.0V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):3710/85 rT [mΩ] (@Tvj max) max:0.048 Tvj [°C] max:140.0 ITSM:60000.0A VT0 [V] (@Tvj max) max:0.75 ∫I2dt [A²s · 103] (@10ms, Tvj max):18000.0 RthJC [K/kW] (@180° el sin) max:12.5 Clamping force [kn] min max:30.0 65.0 ITAVM:3710 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.50/15.0 ITSM [A] (@10ms, Tvj max):60000.0
    通用晶闸管 T1330N18TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1800.0 VDRM/ VRRM (V):1800.0V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1329/85 rT [mΩ] (@Tvj max) max:0.234 Tvj [°C] max:125.0 ITSM:23000.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):2645.0 RthJC [K/kW] (@180° el sin) max:18.4 RthJC [K/kW] (@180° el sin) max:18.4 rT [mΩ] (@Tvj max) max:0.234 Clamping force [kn] min max:20.0 45.0 ITAVM:1329 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1329/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.13/1.0 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):2645.0 ITSM [A] (@10ms, Tvj max):23000.0 VT/IT [V/kA] (@Tvj max):1.13/1.0 Clamping force [kn] min max:20.0 45.0 tq [µs]:300.0 ITSM [A] (@10ms, Tvj max):23000.0
    通用晶闸管 T160N18BOF Infineon(英飞凌) 不重复通态电流:3800A 额定重复关闭状态电压 VDRM:1800V 关闭状态漏泄电流（在 VDRM IDRM 下）:30mA 保持电流Ih最大值:200mA 栅极触发电压-Vgt:1.4V 栅极触发电流-Igt:150mA 包装方式:Tray 电流额定值:190A 工作温度:-40°C ~ 125°C
    通用晶闸管 T1930N34TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:3400.0 VDRM/ VRRM (V):3400.0V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2180/85 rT [mΩ] (@Tvj max) max:0.2 Tvj [°C] max:125.0 ITSM:37000.0 A VT0 [V] (@Tvj max) max:1.08 ∫I2dt [A²s · 103] (@10ms, Tvj max):6850.0 RthJC [K/kW] (@180° el sin) max:8.5 Clamping force [kn] min max:40.0 65.0 ITAVM:2180 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.90/8.0 ITSM [A] (@10ms, Tvj max):37000.0 tq [µs]:450.0
    通用晶闸管 T1080N02TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:200.0 VDRM/ VRRM (V):200.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1075/85 rT [mΩ] (@Tvj max) max:0.2 Tvj [°C] max:140.0 ITSM:14500.0A VT0 [V] (@Tvj max) max:1.02 ∫I2dt [A²s · 103] (@10ms, Tvj max):1050.0 RthJC [K/kW] (@180° el sin) max:33.0 RthJC [K/kW] (@180° el sin) max:33.0 rT [mΩ] (@Tvj max) max:0.2 Clamping force [kn] min max:8.0 16.0 ITAVM:1075 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1075/85 Tvj [°C] max:140.0 VT/IT [V/kA] (@Tvj max):1.81/3.5 VT0 [V] (@Tvj max) max:1.02 ∫I2dt [A²s · 103] (@10ms, Tvj max):1050.0 ITSM [A] (@10ms, Tvj max):14500.0 VT/IT [V/kA] (@Tvj max):1.81/3.5 Clamping force [kn] min max:8.0 16.0 tq [µs]:150.0 ITSM [A] (@10ms, Tvj max):14500.0
    通用晶闸管 T830N18TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1800.0 VDRM/ VRRM (V):1800.0V Housing:Disc dia 58mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):844/85 rT [mΩ] (@Tvj max) max:0.3 Tvj [°C] max:125.0 ITSM:12500.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):781.0 RthJC [K/kW] (@180° el sin) max:30.0 Clamping force [kn] min max:9.0 18.0 ITAVM:826 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.94/3.0 ITSM [A] (@10ms, Tvj max):12500.0 tq [µs]:250.0
    通用晶闸管 T1930N32TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:3200.0 VDRM/ VRRM (V):3200.0 V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2180/85 rT [mΩ] (@Tvj max) max:0.2 Tvj [°C] max:125.0 ITSM:37000.0 A VT0 [V] (@Tvj max) max:1.08 ∫I2dt [A²s · 103] (@10ms, Tvj max):6850.0 RthJC [K/kW] (@180° el sin) max:8.5 Clamping force [kn] min max:40.0 65.0 ITAVM:2180 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.90/8.0 ITSM [A] (@10ms, Tvj max):37000.0 tq [µs]:450.0
    通用晶闸管 T300N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0 V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):303/85 rT [mΩ] (@Tvj max) max:1.35 Tvj [°C] max:125.0 ITSM:3400.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):58.0 RthJC [K/kW] (@180° el sin) max:69.0 RthJC [K/kW] (@180° el sin) max:69.0 rT [mΩ] (@Tvj max) max:1.35 Clamping force [kn] min max:2.5 5.0 ITAVM:303 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):303/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.20/0.8 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):58.0 ITSM [A] (@10ms, Tvj max):3400.0 VT/IT [V/kA] (@Tvj max):2.20/0.8 Clamping force [kn] min max:2.5 5.0 tq [µs]:200.0 ITSM [A] (@10ms, Tvj max):3400.0
    通用晶闸管 T731N44TOH Infineon(英飞凌) 不重复通态电流:17000A 额定重复关闭状态电压 VDRM:4400V 关闭状态漏泄电流（在 VDRM IDRM 下）:150mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:1.26A 工作温度:-40°C ~ 125°C
    通用晶闸管 T430N14TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):433/85 rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 ITSM:4600.0 A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 RthJC [K/kW] (@180° el sin) max:51.0 RthJC [K/kW] (@180° el sin) max:51.0 rT [mΩ] (@Tvj max) max:0.9 Clamping force [kn] min max:4.0 8.0 ITAVM:433 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):433/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 ITSM [A] (@10ms, Tvj max):4600.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 Clamping force [kn] min max:4.0 8.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):4600.0
    通用晶闸管 T420N16TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):424/85 rT [mΩ] (@Tvj max) max:0.75 Tvj [°C] max:125.0 ITSM:6400.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):205.0 RthJC [K/kW] (@180° el sin) max:56.0 RthJC [K/kW] (@180° el sin) max:56.0 rT [mΩ] (@Tvj max) max:0.75 Clamping force [kn] min max:5.0 10.0 ITAVM:424 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):424/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.10/1.5 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):205.0 ITSM [A] (@10ms, Tvj max):6400.0 VT/IT [V/kA] (@Tvj max):2.10/1.5 Clamping force [kn] min max:5.0 10.0 tq [µs]:220.0 ITSM [A] (@10ms, Tvj max):6400.0
    通用晶闸管 T360N20TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2000.0 VDRM/ VRRM (V):2000.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):360/85 rT [mΩ] (@Tvj max) max:1.6 Tvj [°C] max:125.0 ITSM:4500.0 A VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.0 RthJC [K/kW] (@180° el sin) max:44.0 RthJC [K/kW] (@180° el sin) max:44.0 rT [mΩ] (@Tvj max) max:1.6 Clamping force [kn] min max:5.0 10.0 ITAVM:360 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):360/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.88/1.1 VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.0 ITSM [A] (@10ms, Tvj max):4500.0 VT/IT [V/kA] (@Tvj max):2.88/1.1 Clamping force [kn] min max:5.0 10.0 tq [µs]:350.0 ITSM [A] (@10ms, Tvj max):4500.0
    通用晶闸管 T430N16TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0 V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):433/85 rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 ITSM:4600.0 A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 RthJC [K/kW] (@180° el sin) max:51.0 RthJC [K/kW] (@180° el sin) max:51.0 rT [mΩ] (@Tvj max) max:0.9 Clamping force [kn] min max:4.0 8.0 ITAVM:433 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):433/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 ITSM [A] (@10ms, Tvj max):4600.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 Clamping force [kn] min max:4.0 8.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):4600.0
    通用晶闸管 T430N18TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1800.0 VDRM/ VRRM (V):1800.0V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):433/85 rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 ITSM:4600.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 RthJC [K/kW] (@180° el sin) max:51.0 RthJC [K/kW] (@180° el sin) max:51.0 rT [mΩ] (@Tvj max) max:0.9 Clamping force [kn] min max:4.0 8.0 ITAVM:433 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):433/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):106.0 ITSM [A] (@10ms, Tvj max):4600.0 VT/IT [V/kA] (@Tvj max):2.07/1.2 Clamping force [kn] min max:4.0 8.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):4600.0
    通用晶闸管 T1081N65TOH Infineon(英飞凌) 不重复通态电流:35000A 额定重复关闭状态电压 VDRM:6500V 关闭状态漏泄电流（在 VDRM IDRM 下）:400mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:1.8A 工作温度:-40°C ~ 125°C
    通用晶闸管 T560N14TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0 V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):559/85 rT [mΩ] (@Tvj max) max:0.6 Tvj [°C] max:125.0 ITSM:6900.0A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 RthJC [K/kW] (@180° el sin) max:44.0 RthJC [K/kW] (@180° el sin) max:44.0 rT [mΩ] (@Tvj max) max:0.6 Clamping force [kn] min max:5.0 10.0 ITAVM:595 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):559/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 ITSM [A] (@10ms, Tvj max):6900.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 Clamping force [kn] min max:5.0 10.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):6900.0
    通用晶闸管 T1080N06TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:600.0 VDRM/ VRRM (V):600.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1075/85 rT [mΩ] (@Tvj max) max:0.2 Tvj [°C] max:140.0 ITSM:14500.0 A VT0 [V] (@Tvj max) max:1.02 ∫I2dt [A²s · 103] (@10ms, Tvj max):1050.0 RthJC [K/kW] (@180° el sin) max:33.0 RthJC [K/kW] (@180° el sin) max:33.0 rT [mΩ] (@Tvj max) max:0.2 Clamping force [kn] min max:8.0 16.0 ITAVM:1075 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1075/85 Tvj [°C] max:140.0 VT/IT [V/kA] (@Tvj max):1.81/3.5 VT0 [V] (@Tvj max) max:1.02 ∫I2dt [A²s · 103] (@10ms, Tvj max):1050.0 ITSM [A] (@10ms, Tvj max):14500.0 VT/IT [V/kA] (@Tvj max):1.81/3.5 Clamping force [kn] min max:8.0 16.0 tq [µs]:150.0 ITSM [A] (@10ms, Tvj max):14500.0
    通用晶闸管 T660N22TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2200.0 VDRM/ VRRM (V):2200.0V Housing:Disc dia 58mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):659/85 rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:125.0 ITSM:11500.0A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):660.0 RthJC [K/kW] (@180° el sin) max:33.0 Clamping force [kn] min max:10.5 21.0 ITAVM:659 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.53/2.85 ITSM [A] (@10ms, Tvj max):11500.0 tq [µs]:300.0
    通用晶闸管 T470N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0 V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):470/85 rT [mΩ] (@Tvj max) max:0.75 Tvj [°C] max:125.0 ITSM:6350.0 A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):202.0 RthJC [K/kW] (@180° el sin) max:51.0 RthJC [K/kW] (@180° el sin) max:51.0 rT [mΩ] (@Tvj max) max:0.75 Clamping force [kn] min max:4.0 8.0 ITAVM:470 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):470/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.85/1.2 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):202.0 ITSM [A] (@10ms, Tvj max):6350.0 VT/IT [V/kA] (@Tvj max):1.85/1.2 Clamping force [kn] min max:4.0 8.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):6350.0
    通用晶闸管 T360N22TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2200.0 VDRM/ VRRM (V):2200.0 V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):360/85 rT [mΩ] (@Tvj max) max:1.6 Tvj [°C] max:125.0 ITSM:4500.0 A VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.0 RthJC [K/kW] (@180° el sin) max:44.0 RthJC [K/kW] (@180° el sin) max:44.0 rT [mΩ] (@Tvj max) max:1.6 Clamping force [kn] min max:5.0 10.0 ITAVM:360 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):360/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.88/1.1 VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):101.0 ITSM [A] (@10ms, Tvj max):4500.0 VT/IT [V/kA] (@Tvj max):2.88/1.1 Clamping force [kn] min max:5.0 10.0 tq [µs]:350.0 ITSM [A] (@10ms, Tvj max):4500.0
    通用晶闸管 T640N18TOF Infineon(英飞凌) 额定重复关闭状态电压 VDRM:1.8KV 关闭状态漏泄电流（在 VDRM IDRM 下）:50mA 开启状态RMS电流 - It RMS:1.45kA Vf - 正向电压:2.15V 栅极触发电压-Vgt:2.2V 栅极触发电流-Igt:250mA 保持电流Ih最大值:300mA 包装方式:Tray 不重复通态电流:9.4kA 工作温度:-40°C ~ 125°C
    通用晶闸管 T640N16TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1600.0 VDRM/ VRRM (V):1600.0 V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):644/85 rT [mΩ] (@Tvj max) max:0.5 Tvj [°C] max:125.0 ITSM:8000.0 A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):320.0 RthJC [K/kW] (@180° el sin) max:39.0 RthJC [K/kW] (@180° el sin) max:39.0 rT [mΩ] (@Tvj max) max:0.5 Clamping force [kn] min max:6.0 12.0 ITAVM:644 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):644/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.15/2.4 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):320.0 ITSM [A] (@10ms, Tvj max):8000.0 VT/IT [V/kA] (@Tvj max):2.15/2.4 Clamping force [kn] min max:6.0 12.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):8000.0
    通用晶闸管 T1330N20TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2000.0 VDRM/ VRRM (V):2000.0V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1329/85 rT [mΩ] (@Tvj max) max:0.234 Tvj [°C] max:125.0 ITSM:23000.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):2645.0 RthJC [K/kW] (@180° el sin) max:18.4 RthJC [K/kW] (@180° el sin) max:18.4 rT [mΩ] (@Tvj max) max:0.234 Clamping force [kn] min max:20.0 45.0 ITAVM:1329 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):1329/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.13/1.0 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):2645.0 ITSM [A] (@10ms, Tvj max):23000.0 VT/IT [V/kA] (@Tvj max):1.13/1.0 Clamping force [kn] min max:20.0 45.0 tq [µs]:300.0 ITSM [A] (@10ms, Tvj max):23000.0
    通用晶闸管 T730N40TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:4000.0 VDRM/ VRRM (V):4000.0 V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):730/85 rT [mΩ] (@Tvj max) max:0.57 Tvj [°C] max:120.0 ITSM:15800.0 A VT0 [V] (@Tvj max) max:1.2 ∫I2dt [A²s · 103] (@10ms, Tvj max):1250.0 RthJC [K/kW] (@180° el sin) max:21.5 Clamping force [kn] min max:18.0 43.0 ITAVM:730 (180 ° el sin) VT/IT [V/kA] (@Tvj max):3.40/3.5 ITSM [A] (@10ms, Tvj max):15800.0 tq [µs]:400.0
    通用晶闸管 T2001N34TOF Infineon(英飞凌) 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:3400.0 VDRM/ VRRM (V):3400.0V Housing:Disc dia 120mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2060/85 rT [mΩ] (@Tvj max) max:0.25 Tvj [°C] max:125.0 ITSM:41000.0 A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):8400.0 RthJC [K/kW] (@180° el sin) max:8.7 Clamping force [kn] min max:36.0 52.0 ITAVM:2060 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.50/2.0 ITSM [A] (@10ms, Tvj max):41000.0 tq [µs]:300.0
    通用晶闸管 T345N18EOF Infineon(英飞凌) 不重复通态电流:8000A 额定重复关闭状态电压 VDRM:1800V 关闭状态漏泄电流（在 VDRM IDRM 下）:80mA 保持电流Ih最大值:300mA 栅极触发电压-Vgt:2V 栅极触发电流-Igt:200mA 包装方式:Tray 电流额定值:345A 工作温度:-40°C ~ 125°C
    通用晶闸管 T1081N70TOH Infineon(英飞凌) 不重复通态电流:35000A 额定重复关闭状态电压 VDRM:7000V 关闭状态漏泄电流（在 VDRM IDRM 下）:400mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:1.8A 工作温度:-40°C ~ 125°C
    通用晶闸管 T2251N80TOH Infineon(英飞凌) 不重复通态电流:67000A 额定重复关闭状态电压 VDRM:8000V 关闭状态漏泄电流（在 VDRM IDRM 下）:600mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:3.08A 工作温度:-40°C ~ 125°C
    通用晶闸管 T2160N26TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2600.0 VDRM/ VRRM (V):2600.0V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2400/85 rT [mΩ] (@Tvj max) max:0.154 Tvj [°C] max:125.0 ITSM:40000.0 A VT0 [V] (@Tvj max) max:1.05 ∫I2dt [A²s · 103] (@10ms, Tvj max):8000.0 RthJC [K/kW] (@180° el sin) max:8.5 Clamping force [kn] min max:42.0 95.0 ITAVM:2400 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.65/8.8 ITSM [A] (@10ms, Tvj max):40000.0 tq [µs]:400.0
    通用晶闸管 T3160N18TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1800.0 VDRM/ VRRM (V):1800.0 V Housing:Disc dia 111mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):3160/85 rT [mΩ] (@Tvj max) max:0.082 Tvj [°C] max:125.0 ITSM:57000.0 A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):16245.0 RthJC [K/kW] (@180° el sin) max:8.5 RthJC [K/kW] (@180° el sin) max:8.5 rT [mΩ] (@Tvj max) max:0.082 Clamping force [kn] min max:42.0 95.0 ITAVM:3160 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):3160/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.37/6.0 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):16245.0 ITSM [A] (@10ms, Tvj max):57000.0 VT/IT [V/kA] (@Tvj max):1.37/6.0 Clamping force [kn] min max:42.0 95.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):57000.0
    通用晶闸管 T2001N36TOF Infineon(英飞凌) 不重复通态电流:44000A 额定重复关闭状态电压 VDRM:3600V 关闭状态漏泄电流（在 VDRM IDRM 下）:400mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:2.84A 工作温度:-40°C ~ 125°C
    通用晶闸管 T501N70TOH Infineon(英飞凌) 不重复通态电流:13500A 额定重复关闭状态电压 VDRM:7000V 关闭状态漏泄电流（在 VDRM IDRM 下）:200mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:860A 工作温度:-40°C ~ 125°C
    通用晶闸管 T1081N60TOH Infineon(英飞凌) 不重复通态电流:35000A 额定重复关闭状态电压 VDRM:6000V 关闭状态漏泄电流（在 VDRM IDRM 下）:400mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:1.8A 工作温度:-40°C ~ 125°C
    通用晶闸管 T1601N35TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:3500.0 VDRM/ VRRM (V):3500.0V Housing:Disc dia 120mm height 35mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1900/85 rT [mΩ] (@Tvj max) max:0.25 Tvj [°C] max:125.0 ITSM:44000.0A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):8400.0 RthJC [K/kW] (@180° el sin) max:9.0 Clamping force [kn] min max:36.0 52.0 ITAVM:1900 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.50/2.0 ITSM [A] (@10ms, Tvj max):44000.0 tq [µs]:300.0
    通用晶闸管 T1851N70TOH Infineon(英飞凌) 不重复通态电流:50000A 额定重复关闭状态电压 VDRM:7000V 关闭状态漏泄电流（在 VDRM IDRM 下）:500mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:2.5V 包装方式:Tray 电流额定值:2.51A 工作温度:-40°C ~ 125°C
    通用晶闸管 VS-70TPS16PBF Vishay(威世) 电压 - 断态:1.6KV 电压 - 栅极触发（Vgt）（最大值）:1.5V 电流 - 栅极触发（Igt）（最大值）:100mA 电压 - 通态（Vtm）（最大值）:1.4V 电流 - 通态（It（AV））（最大值）:70A 电流 - 通态（It（RMS））（最大值）:75A 电流 - 保持（Ih）（最大值）:200mA 电流 - 断态（最大值）:1mA 电流 - 不重复浪涌 50，60Hz（Itsm）:1400A @ 50Hz SCR 类型:标准恢复型 工作温度:-40°C ~ 125°C 封装/外壳:SUPER-247(TO-274AA) 基本零件编号:70TPS*
    通用晶闸管 T1590N26TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2600.0 VDRM/ VRRM (V):2600.0 V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1590/85 rT [mΩ] (@Tvj max) max:0.237 Tvj [°C] max:125.0 ITSM:28000.0A VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):3920.0 RthJC [K/kW] (@180° el sin) max:12.5 Clamping force [kn] min max:30.0 65.0 ITAVM:1590 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.45/5.0 ITSM [A] (@10ms, Tvj max):28000.0 tq [µs]:400.0
    通用晶闸管 T1590N22TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2200.0 VDRM/ VRRM (V):2200.0 V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1590/85 rT [mΩ] (@Tvj max) max:0.237 Tvj [°C] max:125.0 ITSM:28000.0A VT0 [V] (@Tvj max) max:1.1 ∫I2dt [A²s · 103] (@10ms, Tvj max):3920.0 RthJC [K/kW] (@180° el sin) max:12.5 Clamping force [kn] min max:30.0 65.0 ITAVM:1590 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.45/5.0 ITSM [A] (@10ms, Tvj max):28000.0 tq [µs]:400.0
    通用晶闸管 T420N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0 V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):424/85 rT [mΩ] (@Tvj max) max:0.75 Tvj [°C] max:125.0 ITSM:6400.0A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):205.0 RthJC [K/kW] (@180° el sin) max:56.0 RthJC [K/kW] (@180° el sin) max:56.0 rT [mΩ] (@Tvj max) max:0.75 Clamping force [kn] min max:5.0 10.0 ITAVM:424 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):424/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.10/1.5 VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):205.0 ITSM [A] (@10ms, Tvj max):6400.0 VT/IT [V/kA] (@Tvj max):2.10/1.5 Clamping force [kn] min max:5.0 10.0 tq [µs]:220.0 ITSM [A] (@10ms, Tvj max):6400.0
    通用晶闸管 T2251N70TOH Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:7000.0 VDRM/ VRRM (V):7000.0 V Housing:Disc dia 150mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):2260/85 rT [mΩ] (@Tvj max) max:0.44 Tvj [°C] max:125.0 ITSM:65000.0 A VT0 [V] (@Tvj max) max:1.24 ∫I2dt [A²s · 103] (@10ms, Tvj max):21100.0 RthJC [K/kW] (@180° el sin) max:4.8 Clamping force [kn] min max:63.0 91.0 ITAVM:2260 (180 ° el sin) VT/IT [V/kA] (@Tvj max):3.0/4.0 ITSM [A] (@10ms, Tvj max):65000.0 tq [µs]:550.0
    通用晶闸管 T880N12TOF Infineon(英飞凌) 额定重复关闭状态电压 VDRM:1.2KV 关闭状态漏泄电流（在 VDRM IDRM 下）:100mA 开启状态RMS电流 - It RMS:2.02kA Vf - 正向电压:1.95V 栅极触发电压-Vgt:2.2V 栅极触发电流-Igt:250mA 保持电流Ih最大值:300mA 包装方式:Tray 不重复通态电流:17.5kA 工作温度:-40°C ~ 125°C
    通用晶闸管 T940N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0V Housing:Disc dia 58mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):959/85 rT [mΩ] (@Tvj max) max:0.27 Tvj [°C] max:125.0 ITSM:15500.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):1200.0 RthJC [K/kW] (@180° el sin) max:28.0 Clamping force [kn] min max:10.5 21.0 ITAVM:936 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.95/3.6 ITSM [A] (@10ms, Tvj max):15500.0 tq [µs]:250.0
    通用晶闸管 T560N12TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1200.0 VDRM/ VRRM (V):1200.0V Housing:Disc dia 48mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):559/85 rT [mΩ] (@Tvj max) max:0.6 Tvj [°C] max:125.0 ITSM:6900.0 A VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 RthJC [K/kW] (@180° el sin) max:44.0 RthJC [K/kW] (@180° el sin) max:44.0 rT [mΩ] (@Tvj max) max:0.6 Clamping force [kn] min max:5.0 10.0 ITAVM:595 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):559/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 VT0 [V] (@Tvj max) max:0.8 ∫I2dt [A²s · 103] (@10ms, Tvj max):238.0 ITSM [A] (@10ms, Tvj max):6900.0 VT/IT [V/kA] (@Tvj max):1.92/1.6 Clamping force [kn] min max:5.0 10.0 tq [µs]:250.0 ITSM [A] (@10ms, Tvj max):6900.0
    通用晶闸管 T720N12TOF Infineon(英飞凌) 额定重复关闭状态电压 VDRM:1.2KV 关闭状态漏泄电流（在 VDRM IDRM 下）:80mA 开启状态RMS电流 - It RMS:1.65kA Vf - 正向电压:1.94V 栅极触发电压-Vgt:1.5V 栅极触发电流-Igt:250mA 保持电流Ih最大值:300mA 包装方式:Tray 不重复通态电流:14.5kA 工作温度:-40°C ~ 125°C
    通用晶闸管 T4021N52TOH Infineon(英飞凌) 不重复通态电流:105000A 额定重复关闭状态电压 VDRM:5200V 关闭状态漏泄电流（在 VDRM IDRM 下）:900mA 保持电流Ih最大值:350mA 栅极触发电压-Vgt:3.5V 包装方式:Tray 电流额定值:5.4A 工作温度:-40°C ~ 125°C
    通用晶闸管 T880N14TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0V Housing:Disc dia 58mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):879/85 rT [mΩ] (@Tvj max) max:0.27 Tvj [°C] max:125.0 ITSM:15500.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):1200.0 RthJC [K/kW] (@180° el sin) max:32.0 Clamping force [kn] min max:10.5 21.0 ITAVM:879 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.95/3.6 ITSM [A] (@10ms, Tvj max):15500.0 tq [µs]:250.0
    通用晶闸管 T1960N20TOF VT Infineon(英飞凌) 包装方式:Tray Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2000.0 VDRM/ VRRM (V):2000.0V Housing:Disc dia 100mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1960/85 rT [mΩ] (@Tvj max) max:0.15 Tvj [°C] max:125.0 ITSM:35000.0 A VT0 [V] (@Tvj max) max:0.9 ∫I2dt [A²s · 103] (@10ms, Tvj max):6125.0 RthJC [K/kW] (@180° el sin) max:12.5 Clamping force [kn] min max:30.0 65.0 ITAVM:1960 (180 ° el sin) VT/IT [V/kA] (@Tvj max):2.20/8.0 ITSM [A] (@10ms, Tvj max):35000.0 tq [µs]:300.0
    通用晶闸管 T880N18TOF Infineon(英飞凌) 额定重复关闭状态电压 VDRM:1.8KV 关闭状态漏泄电流（在 VDRM IDRM 下）:100mA 开启状态RMS电流 - It RMS:2.02kA Vf - 正向电压:1.95V 栅极触发电压-Vgt:2.2V 栅极触发电流-Igt:250mA 保持电流Ih最大值:300mA 包装方式:Tray 不重复通态电流:17.5kA 工作温度:-40°C ~ 125°C
    通用晶闸管 TT240N38KOF Infineon(英飞凌) 不重复通态电流:6100A 额定重复关闭状态电压 VDRM:3800V 关闭状态漏泄电流（在 VDRM IDRM 下）:250mA 保持电流Ih最大值:300mA 栅极触发电压-Vgt:1.5V 包装方式:Tray 电流额定值:446A 工作温度:-40°C ~ 125°C
    通用晶闸管 T1220N22TOF VT Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:2200.0 VDRM/ VRRM (V):2200.0V Housing:Disc dia 75mm height 26mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):1220/85 rT [mΩ] (@Tvj max) max:0.275 Tvj [°C] max:125.0 ITSM:22500.0A VT0 [V] (@Tvj max) max:1.0 ∫I2dt [A²s · 103] (@10ms, Tvj max):2531.0 RthJC [K/kW] (@180° el sin) max:18.4 Clamping force [kn] min max:20.0 45.0 ITAVM:1220 (180 ° el sin) VT/IT [V/kA] (@Tvj max):1.38/1.0 ITSM [A] (@10ms, Tvj max):22500.0 tq [µs]:350.0
    通用晶闸管 T390N14TOF Infineon(英飞凌) RoHS compliant:yes 包装方式:TRAY Moisture Level:NA Configuration:Electrical Triggered Phase Control Thyristor VDRM / VRRM [V]:1400.0 VDRM/ VRRM (V):1400.0 V Housing:Disc dia 42mm height 14mm / Ceramic ITAVM/TC [A/°C] (@180° el sin):381/85 rT [mΩ] (@Tvj max) max:0.9 Tvj [°C] max:125.0 ITSM:4250.0A VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):91.0 RthJC [K/kW] (@180° el sin) max:62.0 RthJC [K/kW] (@180° el sin) max:62.0 rT [mΩ] (@Tvj max) max:0.9 Clamping force [kn] min max:3.0 6.0 ITAVM:381 (180 ° el sin) ITAVM/TC [A/°C] (@180° el sin):381/85 Tvj [°C] max:125.0 VT/IT [V/kA] (@Tvj max):2.00/1.1 VT0 [V] (@Tvj max) max:0.85 ∫I2dt [A²s · 103] (@10ms, Tvj max):91.0 ITSM [A] (@10ms, Tvj max):4250.0 VT/IT [V/kA] (@Tvj max):2.00/1.1 Clamping force [kn] min max:3.0 6.0 tq [µs]:200.0 ITSM [A] (@10ms, Tvj max):4250.0
    通用晶闸管 TD180N16KOF Infineon(英飞凌) 不重复通态电流:4800A 额定重复关闭状态电压 VDRM:1600V 关闭状态漏泄电流（在 VDRM IDRM 下）:50mA 保持电流Ih最大值:200mA 栅极触发电压-Vgt:2V 栅极触发电流-Igt:150mA 包装方式:Tray 电流额定值:180A 工作温度:-40°C ~ 130°C
    通用晶闸管 T2510N06TOF VT Infineon(英飞凌) 额定重复关闭状态电压 VDRM:600V 关闭状态漏泄电流（在 VDRM IDRM 下）:150mA 开启状态RMS电流 - It RMS:5.35kA Vf - 正向电压:1.22V 栅极触发电压-Vgt:1.5V 栅极触发电流-Igt:250mA 保持电流Ih最大值:300mA 包装方式:Tray 不重复通态电流:46kA 工作温度:-40°C ~ 140°C

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