产品 | 型号 | 品牌 | 参数 |
IGBT晶体管 | IHW30N60T | Infineon(英飞凌) | Moisture Level:NA td(off):254.0ns tf:46.0ns Technology:IGBT TRENCHSTOP™ Eoff:0.8mJ tr:21.0ns Eoff (Hard Switching):0.8mJ 封装/外壳:TO-247 Budgetary Price €/1k:1.57 ICpuls max:90.0A Ptot max:187.0W IC (@ 25°) max:60.0A td(on):23.0ns Switching Frequency min max:2.0kHz 20.0kHz IF max:13.0A Switching Frequency:TRENCHSTOP™ 2-20 kHz QGate:167.0nC Voltage Class max:600.0V VCE max:600.0V VF:1.1V VCE(sat):1.5V IFpuls max:30.0A IC (@ 100°) max:30.0A |
IGBT晶体管 | IRG4MC30F | Infineon(英飞凌) | 封装/外壳:TO-254AA Technology:Hi-Rel DISCRETE Circuit:Discrete Rth(JC):1.67 Halogen-Free:Yes IC @ 100C (A):15 VCE(ON) Max (V):1.7 VCES (V):600 IC @ 25C (A):28 |
IGBT晶体管 | AOK60B65H2AL | AOS(万国半导体) | |
IGBT晶体管 | AOB20B65M1 | AOS(万国半导体) |