IC普拉斯 元器件现货
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| 产品 | 型号 | 品牌 | 参数 |
| 分立半导体模块 | V72-14.150M | Infineon(英飞凌) | 封装/外壳:E-EUPEC-0 RoHS compliant:yes Moisture Level:NA Features:Clamping force: 15.0kN / Disc diameter: 58mm / Height: 14mm / Min. creeping distance: 11mm Diameter [mm]:58.0 Height [mm]:14.0 Creeping distance [mm] min:11.0 Clamping force [kn] max:15.0 |
| 分立半导体模块 | V50-14.60N | Infineon(英飞凌) | 封装/外壳:E-EUPEC-0 RoHS compliant:yes Moisture Level:NA Features:Clamping force: 6.0kN / Disc diameter: 42mm / Height: 14mm / Min. creeping distance: 11mm Diameter [mm]:42.0 Height [mm]:14.0 Creeping distance [mm] min:11.0 Clamping force [kn] max:6.0 Creeping distance [mm] min:11.0 Clamping force [kn] max:6.0 |
| 分立半导体模块 | V61-14.80M | Infineon(英飞凌) | 封装/外壳:E-EUPEC-0 RoHS compliant:yes Moisture Level:NA Features:Clamping force: 8.0kN / Disc diameter: 48mm / Height: 14mm / Min. creeping distance: 11mm Diameter [mm]:48.0 Height [mm]:14.0 Creeping distance [mm] min:11.0 Clamping force [kn] max:8.0 |
| 分立半导体模块 | V89-26.400N | Infineon(英飞凌) | 封装/外壳:E-EUPEC-0 RoHS compliant:yes Moisture Level:NA Features:Clamping force: 40.0kN / Disc diameter: 75mm / Height: 26mm / Min. creeping distance: 26mm Diameter [mm]:75.0 Height [mm]:26.0 Creeping distance [mm] min:26.0 Clamping force [kn] max:40.0 |
| 分立半导体模块 | V89-26.400N | Infineon(英飞凌) | 封装/外壳:E-EUPEC-0 RoHS compliant:yes Moisture Level:NA Features:Clamping force: 40.0kN / Disc diameter: 75mm / Height: 26mm / Min. creeping distance: 26mm Diameter [mm]:75.0 Height [mm]:26.0 Creeping distance [mm] min:26.0 Clamping force [kn] max:40.0 |
| 分立半导体模块 | V72-26.80M | Infineon(英飞凌) | 封装/外壳:E-EUPEC-0 RoHS compliant:yes Moisture Level:NA Features:Clamping force: 8.0kN / Disc diameter: 58mm / Height: 26mm / Min. creeping distance: 23mm Diameter [mm]:58.0 Height [mm]:26.0 Creeping distance [mm] min:23.0 Clamping force [kn] max:8.0 |
| 分立半导体模块 | V72-14.150M | Infineon(英飞凌) | 封装/外壳:E-EUPEC-0 RoHS compliant:yes Moisture Level:NA Features:Clamping force: 15.0kN / Disc diameter: 58mm / Height: 14mm / Min. creeping distance: 11mm Diameter [mm]:58.0 Height [mm]:14.0 Creeping distance [mm] min:11.0 Clamping force [kn] max:15.0 |
| 分立半导体模块 | V61-14.80M | Infineon(英飞凌) | 封装/外壳:E-EUPEC-0 RoHS compliant:yes Moisture Level:NA Features:Clamping force: 8.0kN / Disc diameter: 48mm / Height: 14mm / Min. creeping distance: 11mm Diameter [mm]:48.0 Height [mm]:14.0 Creeping distance [mm] min:11.0 Clamping force [kn] max:8.0 |
| 分立半导体模块 | V50-14.60N | Infineon(英飞凌) | 封装/外壳:E-EUPEC-0 RoHS compliant:yes Moisture Level:NA Features:Clamping force: 6.0kN / Disc diameter: 42mm / Height: 14mm / Min. creeping distance: 11mm Diameter [mm]:42.0 Height [mm]:14.0 Creeping distance [mm] min:11.0 Clamping force [kn] max:6.0 Creeping distance [mm] min:11.0 Clamping force [kn] max:6.0 |
| 分立半导体模块 | V50-14.45N | Infineon(英飞凌) | 封装/外壳:E-EUPEC-0 FET类型:Socket 长度:14mm RoHS compliant:yes Moisture Level:NA Features:Clamping force: 4.5kN / Disc diameter: 42mm / Height: 14mm / Min. creeping distance: 11mm Diameter [mm]:42.0 Height [mm]:14.0 Creeping distance [mm] min:11.0 Clamping force [kn] max:4.5 Creeping distance [mm] min:11.0 Clamping force [kn] max:4.5 |
| 分立半导体模块 | DD260N18K | Infineon(英飞凌) | 封装/外壳:BG-PB50-1 FET类型:RectifierDiodeModule 反向电压Vr:1.8KV 输出电流:410A 栅极触发电流-Igt:30mA 配置:Rectifier Diode 结壳热阻RthJC:0.17 热敏电阻Rt:0.68 工作温度-结:150.0 正向浪涌电流Ifsm:8300.0 阈值电压Vt0:0.7 I²t-value:344.0 |
| 分立半导体模块 | BSM600D12P3G001 | ROHM(罗姆) | |
| 分立半导体模块 | BSM600D12P3G001 | ROHM(罗姆) |